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- Title
Growth of Hg 0.7 Cd 0.3 Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy.
- Authors
Ma, Shuo; Pan, Wenwu; Sun, Xiao; Zhang, Zekai; Gu, Renjie; Faraone, Lorenzo; Lei, Wen
- Abstract
In this paper, we present a study on the direct growth of H g 0.7 C d 0.3 T e thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing H g 0.7 C d 0.3 T e on mica (001) substrates is found to be the (111) orientation due to a better lattice match between the H g 0.7 C d 0.3 T e layer and the underlying mica substrate. The influence of growth parameters (mainly temperature and Hg flux) on the material quality of epitaxial H g 0.7 C d 0.3 T e thin films is studied, and the optimal growth temperature and Hg flux are found to be approximately 190 °C and 4.5 × 10 − 4 Torr as evidenced by higher crystalline quality and better surface morphology. H g 0.7 C d 0.3 T e thin films (3.5 µm thick) grown under these optimal growth conditions present a full width at half maximum of 345.6 arc sec for the X-ray diffraction rocking curve and a root-mean-square surface roughness of 6 nm. However, a significant number of microtwin defects are observed using cross-sectional transmission electron microscopy, which leads to a relatively high etch pit density (mid- 10 7 c m − 2 ) in the H g 0.7 C d 0.3 T e thin films. These findings not only facilitate the growth of HgCdTe on mica substrates for fabricating curved IR sensors but also contribute to a better understanding of growth of traditional zinc-blende semiconductors on layered substrates.
- Subjects
MOLECULAR beam epitaxy; SUBSTRATES (Materials science); SURFACE roughness; THIN films; TRANSMISSION electron microscopy
- Publication
Molecules, 2024, Vol 29, Issue 16, p3947
- ISSN
1420-3049
- Publication type
Article
- DOI
10.3390/molecules29163947