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- Title
AFM and XPS studies on material removal mechanism of sapphire wafer during chemical mechanical polishing (CMP).
- Authors
Zhou, Yan; Pan, Guoshun; Shi, Xiaolei; Gong, Hua; Xu, Li; Zou, Chunli
- Abstract
The material removal mechanism of sapphire wafer during chemical mechanical polishing has been studied through X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements. XPS results indicate that alumina silicate (AlSiO·2HO) is generated on the polished sapphire surface by SiO slurry, otherwise alumina hydrate (AlO(OH)) on the polished surface by HO solution. Meanwhile, ultra-smooth polished surface with extremely low Ra of below 0.1 nm and atomic step structure morphology via AFM is realized using SiO slurry. Through investigating the variations of the surface characteristics polished by different ingredients via the morphology and force curve measurements, it's reveals that the product-aluminum silicate with stronger adhesion and lower hardness is more readily to generate and be removed than the product-alumina hydrate induced by HO. Thus, except for atomic scale mechanical abrading, the abrasive SiO nanoparticle is used for anticipating in the chemical reaction, resulting in superior surface finish of sapphire wafer with high efficiency.
- Subjects
SAPPHIRES; SILICON oxide; OPTICAL materials; GRINDING &; polishing; ATOMIC force microscopy; X-ray photoelectron spectroscopy
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 12, p9921
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-3668-x