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- Title
Growth of high c-orientated crystalline GaN films on amorphous Cu/glass substrates with low-temperature ECR-PEMOCVD.
- Authors
Qin, Fu-Wen; Zhong, Miao-Miao; Liu, Yue-Mei; Wang, Hui; Bian, Ji-Ming; Wang, Chong; Zhao, Yue; Zhang, Dong; Li, Qin-ming
- Abstract
A low temperature growth method based on electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) was proposed for the growth of gallium nitride (GaN) films on ordinary soda-lime glass substrates with sputtered Cu as intermediate layer (Cu/glass substrates). The influence of deposition temperature on the properties of the GaN films on Cu/glass substrates was systematically investigated by means of In-situ reflection high energy electron diffraction, X-ray diffraction, atomic force microscopy and photoluminescence spectra. With this method, high c-orientated crystalline GaN films with relatively smooth surface were achieved on amorphous Cu/glass substrate at an extremely low temperature of ~400 °C. The successfully growth of crystalline GaN films on amorphous Cu/glass substrates show great potential for significant improvements in the scalability and cost of GaN based devices, since the adverse effects with high temperature process for glass substrates can be effectively suppressed by this technique.
- Subjects
GALLIUM nitride films; AMORPHOUS substances; CYCLOTRON resonance; ATOMIC force microscopy; HIGH energy electron diffraction; X-ray diffraction; CHEMICAL vapor deposition; PHOTOLUMINESCENCE; SPECTRUM analysis; THERMAL properties
- Publication
Journal of Materials Science: Materials in Electronics, 2014, Vol 25, Issue 2, p969
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1673-5