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- Title
Fabrication of LaTaO using a new precursor solution route by chemical solution method.
- Authors
Wang, Y.; Zhou, L.; Lu, Y.; Li, C.; Yu, Z.; Li, J.; Jin, L.; Shen, Y.; Wang, P.
- Abstract
LaTaO (LTO) has been fabricated using a new precursor solution route by chemical solution method. The newly developed LTO precursor solution was obtained in ambient atmosphere. A serious of studies on the properties of LTO precursor gel and its powder annealed at different temperatures were presented in order to understand the decomposition of LTO precursor gel and the growth behavior of LTO. The single phase LTO powder and LTO film on textured Ni-W substrate were obtained after annealed at 1,100° in a gas mixture of Ar-4% H. But it should be pointed out that LTO film was annealed by adopting a rapid elevated temperature processing (RETP) method. X-ray diffraction shows that the LTO film on Ni-W tape was highly oriented, and its out-of-plane texture is very close to that of the underlying Ni-W substrate. The SEM investigation of LTO film reveals a dense, smooth, pinhole-free and crack-free microstructure for coated buffer. These results offer the potential to use the LTO film prepared by the new precursor solution route as a buffer layer for further manufacturing other buffer layer in coated conductors.
- Subjects
ANNEALING of metals; CHEMICAL decomposition; POWDER metallurgy; X-ray diffraction; COATING processes
- Publication
Journal of Materials Science: Materials in Electronics, 2011, Vol 22, Issue 12, p1744
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-011-0355-4