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- Title
Thermal instability of electron traps in InAs/GaAs quantum dot structures.
- Authors
Kaniewska, M.; Engström, O.; Kaczmarczyk, M.; Zaremba, G.
- Abstract
Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator.
- Subjects
TEMPERATURE measurements; THERMAL insulation; QUANTUM dots; DEEP level transient spectroscopy; SURFACE defects; QUANTUM electronics; SEMICONDUCTORS; ELECTRIC oscillators; ELECTRONS
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, p101
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-008-9703-4