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- Title
AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell.
- Authors
Dawidowski, Wojciech; Šciana, Beata; Zborowska-Lindert, Iwona; Mikolášek, Miroslav; Latkowska, Magdalena; Radziewicz, Damian; Pucicki, Damian; Bielak, Katarzyna; Badura, Mikołaj; Kováč, Jaroslav; Tłaczała, Marek
- Abstract
Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.
- Subjects
INDIUM compounds; GALLIUM arsenide; SOLAR cells; ATMOSPHERIC pressure; METAL organic chemical vapor deposition; FABRICATION (Manufacturing); PHOTOVOLTAIC power generation
- Publication
International Journal of Electronics & Telecommunications, 2014, Vol 60, Issue 2, p151
- ISSN
2081-8491
- Publication type
Article
- DOI
10.2478/eletel-2014-0018