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- Title
A novel semiconductor compatible path for nano-graphene synthesis using CBr<sub>4</sub> precursor and Ga catalyst.
- Authors
S. M. Wang; Q. Gong; Y. Y. Li; C. F. Cao; H. F. Zhou; J. Y. Yan; Q. B. Liu; L. Y. Zhang; G.Q. Ding; Z. F. Di; X. M. Xie
- Abstract
We propose a novel semiconductor compatible path for nano-graphene synthesis using precursors containing C-Br bonding and liquid catalyst. The unique combination of CBr4 as precursor and Ga as catalyst leads to efficient C precipitation at a synthesis temperature of 2006C or lower. The non-wetting nature of liquid Ga on tested substrates limits nano-scale graphene to form on Ga droplets and substrate surfaces at low synthesis temperatures of T ⩽ 450°C and at droplet/substrate interfaces by C diffusion via droplet edges when T ⩾ 400°C. Good quality interface nano-graphene is demonstrated and the quality can be further improved by optimization of synthesis conditions and proper selection of substrate type and orientation. The proposed method provides a scalable and transfer-free route to synthesize graphene/ semiconductor heterostructures, graphene quantum dots as well as patterned graphene nano-structures at a medium temperature range of 400-700°C suitable for most important elementary and compound semiconductors
- Subjects
SEMICONDUCTORS; GRAPHENE; NANOSTRUCTURED materials; HETEROSTRUCTURES; QUANTUM dots
- Publication
Scientific Reports, 2014, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/srep04653