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- Title
Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents.
- Authors
Zhou, Yaoqiang; Tong, Lei; Chen, Zefeng; Tao, Li; Pang, Yue; Xu, Jian-Bin
- Abstract
Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the Ids on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10−5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10−6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits. Here, the authors report the realization of WSe2 Schottky junction field-effect transistors with asymmetric multi-layer graphene and WTe2 van der Waals contacts, enabling reconfigurable polarity, low off-state currents, near-ideal rectifying behaviour and bipolar photovoltaic response.
- Subjects
FIELD-effect transistors; JUNCTION transistors; STRAY currents; OPEN-circuit voltage; INTEGRATED circuits; VAN der Waals forces; SOLAR cells
- Publication
Nature Communications, 2023, Vol 14, Issue 1, p1
- ISSN
2041-1723
- Publication type
Article
- DOI
10.1038/s41467-023-39705-w