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Impact of non-uniformly doped double-gate junctionless transistor on the performance of 6T-SRAM bitcell.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 2, p. 72, doi. 10.1049/mnl.2019.0375
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- Article
Enhancing the delay performance of junctionless silicon nanotube based 6T SRAM.
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 7, p. 965, doi. 10.1049/mnl.2017.0867
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- Publication type:
- Article
Ternary static random access memory using quantum dot gate field-effect transistor.
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- Micro & Nano Letters (Wiley-Blackwell), 2015, v. 10, n. 11, p. 621, doi. 10.1049/mnl.2015.0200
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- Article
스위칭 회로를 이용한 다수의 입출력 쌍을 갖는 SRAM 기반 물리적 복제 불가능 보안회로.
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- Journal of the Korea Institute of Information & Communication Engineering, 2020, v. 24, n. 8, p. 1037, doi. 10.6109/jkiice.2020.24.8.1037
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- Article
STABILITY PARAMETERS OF REGISTER FILE BIT CELL WITH LOW POWER CONSUMPTION PRIORITY.
- Published in:
- Electronics & Control Systems, 2023, v. 77, n. 3, p. 40, doi. 10.18372/1990-5548.77.17963
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- Article
Ultra-fast data sanitization of SRAM by back-biasing to resist a cold boot attack.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-021-03994-2
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- Article
Multi-Ported GC-eDRAM Bitcell with Dynamic Port Configuration and Refresh Mechanism †.
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- Journal of Low Power Electronics & Applications, 2024, v. 14, n. 1, p. 2, doi. 10.3390/jlpea14010002
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- Article
A Power-Gated 8-Transistor Physically Unclonable Function Accelerates Evaluation Speeds.
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- Journal of Low Power Electronics & Applications, 2023, v. 13, n. 4, p. 53, doi. 10.3390/jlpea13040053
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- Article
A Spintronic 2M/7T Computation-in-Memory Cell.
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- Journal of Low Power Electronics & Applications, 2022, v. 12, n. 4, p. 63, doi. 10.3390/jlpea12040063
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- Article
Efficiency of Priority Queue Architectures in FPGA †.
- Published in:
- Journal of Low Power Electronics & Applications, 2022, v. 12, n. 3, p. N.PAG, doi. 10.3390/jlpea12030039
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- Publication type:
- Article
Towards Integration of a Dedicated Memory Controller and Its Instruction Set to Improve Performance of Systems Containing Computational SRAM.
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- Journal of Low Power Electronics & Applications, 2022, v. 12, n. 1, p. 18, doi. 10.3390/jlpea12010018
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- Article
On Improving Reliability of SRAM-Based Physically Unclonable Functions.
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- Journal of Low Power Electronics & Applications, 2017, v. 7, n. 1, p. 2, doi. 10.3390/jlpea7010002
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- Article
Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions.
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- Journal of Low Power Electronics & Applications, 2016, v. 6, n. 3, p. 16, doi. 10.3390/jlpea6030016
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- Publication type:
- Article
A Technique for Improving Lifetime of Non-Volatile Caches Using Write-Minimization.
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- Journal of Low Power Electronics & Applications, 2016, v. 6, n. 1, p. 1, doi. 10.3390/jlpea6010001
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- Article
Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory.
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- Journal of Low Power Electronics & Applications, 2014, v. 4, n. 3, p. 214, doi. 10.3390/jlpea4030214
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- Article
A Digital Auto-Zeroing Circuit to Reduce Offset in Sub-Threshold Sense Amplifiers.
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- Journal of Low Power Electronics & Applications, 2013, v. 3, n. 2, p. 159, doi. 10.3390/jlpea3020159
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- Article
Exploration of Sub-V<sub>T</sub> and Near-V<sub>T</sub> 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling.
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- Journal of Low Power Electronics & Applications, 2013, v. 3, n. 2, p. 54, doi. 10.3390/jlpea3020054
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- Article
Impact of Energy Dependence on Ground Level and Avionic SEE Rate Prediction When Applying Standard Test Procedures.
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- Aerospace (MDPI Publishing), 2019, v. 6, n. 11, p. 119, doi. 10.3390/aerospace6110119
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- Article
A study of emerging semi-conductor devices for memory applications.
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- International Journal of Nano Dimension, 2021, v. 12, n. 3, p. 186
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- Article
Resistive switching properties of CdTe/CdSe core–shell quantum dots incorporated organic cow milk for memory application.
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- Functional Materials Letters, 2023, v. 16, n. 7, p. 1, doi. 10.1142/S1793604723400271
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- Publication type:
- Article
Bi-Directional and Operand-Controllable In-Memory Computing for Boolean Logic and Search Operations with Row and Column Directional SRAM (RC-SRAM).
- Published in:
- Micromachines, 2024, v. 15, n. 8, p. 1056, doi. 10.3390/mi15081056
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- Publication type:
- Article
DAM SRAM CORE: An Efficient High-Speed and Low-Power CIM SRAM CORE Design for Feature Extraction Convolutional Layers in Binary Neural Networks.
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- Micromachines, 2024, v. 15, n. 5, p. 617, doi. 10.3390/mi15050617
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- Article
Secure ECDSA SRAM-PUF Based on Universal Single/Double Scalar Multiplication Architecture.
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- Micromachines, 2024, v. 15, n. 4, p. 552, doi. 10.3390/mi15040552
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- Publication type:
- Article
Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors.
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- Micromachines, 2024, v. 15, n. 3, p. 420, doi. 10.3390/mi15030420
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- Publication type:
- Article
Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset.
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- Micromachines, 2024, v. 15, n. 2, p. 201, doi. 10.3390/mi15020201
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- Article
A High-Precision Voltage-Quantization-Based Current-Mode Computing-in-Memory SRAM.
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- Micromachines, 2023, v. 14, n. 12, p. 2180, doi. 10.3390/mi14122180
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- Publication type:
- Article
Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.
- Published in:
- Micromachines, 2023, v. 14, n. 8, p. 1620, doi. 10.3390/mi14081620
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- Publication type:
- Article
FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis.
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- Micromachines, 2023, v. 14, n. 8, p. 1535, doi. 10.3390/mi14081535
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- Article
Investigation of Single-Event Upset in Graphene Nano-Ribbon FET SRAM Cell.
- Published in:
- Micromachines, 2023, v. 14, n. 7, p. 1449, doi. 10.3390/mi14071449
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- Article
A High-Reliability 12T SRAM Radiation-Hardened Cell for Aerospace Applications.
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- Micromachines, 2023, v. 14, n. 7, p. 1305, doi. 10.3390/mi14071305
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- Article
Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects.
- Published in:
- Micromachines, 2023, v. 14, n. 5, p. 1090, doi. 10.3390/mi14051090
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- Article
A Novel Low-Power and Soft Error Recovery 10T SRAM Cell.
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- Micromachines, 2023, v. 14, n. 4, p. 845, doi. 10.3390/mi14040845
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- Article
Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits.
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- Micromachines, 2023, v. 14, n. 3, p. 581, doi. 10.3390/mi14030581
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- Publication type:
- Article
Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell.
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- Micromachines, 2023, v. 14, n. 2, p. 232, doi. 10.3390/mi14020232
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- Article
High-Performance and Flexible Design Scheme with ECC Protection in the Cache.
- Published in:
- Micromachines, 2022, v. 13, n. 11, p. 1931, doi. 10.3390/mi13111931
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- Publication type:
- Article
A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor.
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- Micromachines, 2022, v. 13, n. 10, p. 1625, doi. 10.3390/mi13101625
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- Article
SRAM Cell Design Challenges in Modern Deep Sub-Micron Technologies: An Overview.
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- Micromachines, 2022, v. 13, n. 8, p. 1332, doi. 10.3390/mi13081332
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- Article
A Timing-Based Split-Path Sensing Circuit for STT-MRAM.
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- Micromachines, 2022, v. 13, n. 7, p. N.PAG, doi. 10.3390/mi13071004
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- Publication type:
- Article
Deep Q-Learning with Bit-Swapping-Based Linear Feedback Shift Register fostered Built-In Self-Test and Built-In Self-Repair for SRAM.
- Published in:
- Micromachines, 2022, v. 13, n. 6, p. 971, doi. 10.3390/mi13060971
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- Publication type:
- Article
Efficient Acceleration of Stencil Applications through In-Memory Computing.
- Published in:
- Micromachines, 2020, v. 11, n. 6, p. 622, doi. 10.3390/mi11060622
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- Publication type:
- Article
Electrical Coupling and Simulation of Monolithic 3D Logic Circuits and Static Random Access Memory.
- Published in:
- Micromachines, 2019, v. 10, n. 10, p. 637, doi. 10.3390/mi10100637
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- Publication type:
- Article
A Symmetric Novel 8T3R Non-Volatile SRAM Cell for Embedded Applications.
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- Symmetry (20738994), 2022, v. 14, n. 4, p. N.PAG, doi. 10.3390/sym14040768
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- Publication type:
- Article
Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device.
- Published in:
- Symmetry (20738994), 2020, v. 12, n. 12, p. 2030, doi. 10.3390/sym12122030
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- Article
Design and Performance Analysis of SRAM Cells.
- Published in:
- IUP Journal of Electrical & Electronics Engineering, 2021, v. 14, n. 1, p. 7
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- Article
Sub-wavelength Lithography and Variability Aware SRAM Characterization.
- Published in:
- Radioengineering, 2012, v. 21, n. 1, p. 219
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- Article
Cloud accelerated alignment and assembly of full-length single-cell RNA-seq data using Falco.
- Published in:
- BMC Genomics, 2019, v. 20, p. 1, doi. 10.1186/s12864-019-6341-6
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- Article
Voltage Contrast Imaging with Energy-Controlled Signal in an FE-SEM.
- Published in:
- 2019
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- Publication type:
- Abstract
Memory Module: High-Speed Low Latency Data Storing Modules.
- Published in:
- Journal of VLSI Circuits & Systems (JVCS), 2023, v. 5, n. 1, p. 35, doi. 10.31838/jvcs/05.01.05
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- Publication type:
- Article
Multiplier Design using Machine Learning Alogorithms for Energy Efficiency.
- Published in:
- Journal of VLSI Circuits & Systems (JVCS), 2023, v. 5, n. 1, p. 28, doi. 10.31838/jvcs/05.01.04
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- Article
Flip-Flop Realization: Conventional Memory Elements Design with Transistor Nodes.
- Published in:
- Journal of VLSI Circuits & Systems (JVCS), 2023, v. 5, n. 1, p. 20, doi. 10.31838/jvcs/05.01.03
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- Publication type:
- Article