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Resonant tunnelling into the two-dimensional subbands of InSe layers.
- Published in:
- Communications Physics, 2020, v. 3, n. 1, p. 1, doi. 10.1038/s42005-020-0290-x
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- Article
Tunnel spectroscopy of localised electronic states in hexagonal boron nitride.
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- Communications Physics, 2018, v. 1, n. 1, p. N.PAG, doi. 10.1038/s42005-018-0097-1
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- Article
Coulomb Correlation Gap at Magnetic Tunneling between Graphene Layers.
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- JETP Letters, 2023, v. 118, n. 6, p. 433, doi. 10.1134/S0021364023602464
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- Article
Strong Effect of the Wavelength of Light on Quantum Oscillations of the Photocurrent and Their Resonant Tunneling Nature in p–i–n GaAs/AlAs Heterostructures.
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- JETP Letters, 2021, v. 114, n. 6, p. 332, doi. 10.1134/S0021364021180089
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- Article
Effect of the Radiation Power on the Modification of Oscillations of the Photocurrent in Single-Barrier p–i–n GaAs/AlAs/GaAs Heterostructures with InAs Quantum Dots.
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- JETP Letters, 2021, v. 113, n. 9, p. 586, doi. 10.1134/S0021364021090113
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- Article
Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier.
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- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00470-z
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- Article
Detection of single photons by a resonant tunneling heterostructure with a quantum dot layer.
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- Journal of Experimental & Theoretical Physics, 2010, v. 111, n. 2, p. 269, doi. 10.1134/S1063776110080194
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- Article
One-electron spin-dependent transport in split-gate structures containing self-organized InAs quantum dots.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 145, doi. 10.1134/S106377610707031X
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- Article
Magnetic-field-induced Fermi-edge singularity in the tunneling current through an InAs self-assembled quantum dot.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 152, doi. 10.1134/S1063776107070333
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- Article
Observation of the low-temperature peak in the interlayer tunneling conductance in bilayer electron systems in the absence of the magnetic field.
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- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 177, doi. 10.1134/S1063776107070394
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- Article
Resonant Tunneling of Electrons through Virtual Interference States Formed as a Result of Reflection from the Boundary of Strongly Doped Region of GaAs.
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- Journal of Experimental & Theoretical Physics, 2004, v. 99, n. 3, p. 530, doi. 10.1134/1.1809681
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- Article
Conductivity and persistent photoconductivity in GaAs epitaxial films containing single and double delta-doped layers.
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- Journal of Experimental & Theoretical Physics, 1998, v. 86, n. 2, p. 383, doi. 10.1134/1.558440
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- Article
The existence of pronormal π-Hall subgroups in E-groups.
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- Siberian Mathematical Journal, 2015, v. 56, n. 3, p. 379, doi. 10.1134/S0037446615030015
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- Article
On the pronormality of hall subgroups.
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- Siberian Mathematical Journal, 2013, v. 54, n. 1, p. 22, doi. 10.1134/S0037446613010035
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- Article
Pronormality of Hall subgroups in finite simple groups.
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- Siberian Mathematical Journal, 2012, v. 53, n. 3, p. 419, doi. 10.1134/S0037446612020231
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- Article
Strong reality of finite simple groups.
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- Siberian Mathematical Journal, 2010, v. 51, n. 4, p. 610, doi. 10.1007/s11202-010-0062-z
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- Article
A conjugacy criterion for Hall subgroups in finite groups.
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- Siberian Mathematical Journal, 2010, v. 51, n. 3, p. 402, doi. 10.1007/s11202-010-0041-4
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- Article
On the Conjugacy problem for Carter subgroups.
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- Siberian Mathematical Journal, 2006, v. 47, n. 4, p. 597, doi. 10.1007/s11202-006-0071-0
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- Article
Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures.
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- Advanced Functional Materials, 2019, v. 29, n. 3, p. N.PAG, doi. 10.1002/adfm.201805491
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- Article
INTRODUCTION TO TWO-DIMENSIONAL MATERIALS.
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- Surface Review & Letters, 2021, v. 28, n. 8, p. 1, doi. 10.1142/S0218625X21400059
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- Article
TECHNOLOGY AND APPLICATIONS OF GRAPHENE OXIDE MEMBRANES.
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- Surface Review & Letters, 2021, v. 28, n. 8, p. 1, doi. 10.1142/S0218625X21400047
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- Article
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures.
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- Nature Nanotechnology, 2014, v. 9, n. 10, p. 808, doi. 10.1038/nnano.2014.187
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- Article
MAGNETIC FIELD DEPENDENCE OF MANY-BODY ENHANCED ELECTRON TUNNELLING THROUGH A QUANTUM DOT.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2009, v. 23, n. 12/13, p. 2974, doi. 10.1142/S0217979209062657
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- Article
Manifestations of Resonant-Tunneling Processes and Random Potential Fluctuations with the Participation of Quantum-Dot Levels in the Photocurrent Relaxation of p–i–n GaAs/AlAs Heterostructures.
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- Semiconductors, 2021, v. 55, n. 11, p. 835, doi. 10.1134/S1063782621100122
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- Article
On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures.
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- Semiconductors, 2020, v. 54, n. 3, p. 291, doi. 10.1134/S1063782620030082
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- Article
Observation of Regions of Negative Differential Conductivity and Current Generation during Tunneling through Zero-Dimensional Defect Levels of the h-BN Barrier in Graphene/h-BN/Graphene Heterostructures.
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- Semiconductors, 2019, v. 53, n. 8, p. 1038, doi. 10.1134/S1063782619080104
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- Article
Quantum Oscillations of Photoconductivity Relaxation in p-i-n GaAs/InAs/AlAs Heterodiodes.
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- Semiconductors, 2018, v. 52, n. 6, p. 739, doi. 10.1134/S1063782618060088
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- Article
Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction.
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- Semiconductors, 2013, v. 47, n. 9, p. 1215, doi. 10.1134/S1063782613090091
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- Article
ON THE BASE SIZE OF A TRANSITIVE GROUP WITH SOLVABLE POINT STABILIZER.
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- Journal of Algebra & Its Applications, 2012, v. 11, n. 1, p. 1250015-1, doi. 10.1142/S0219498811005403
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- Article
The Number of Sylow Subgroups in Special Linear Groups of Degree 2.
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- Algebra & Logic, 2018, v. 56, n. 6, p. 498, doi. 10.1007/s10469-018-9471-z
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- Article
Pronormality of Hall Subgroups in Their Normal Closure.
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- Algebra & Logic, 2018, v. 56, n. 6, p. 451, doi. 10.1007/s10469-018-9467-8
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- Article
Abnormality Criteria for p-Complements.
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- Algebra & Logic, 2016, v. 55, n. 5, p. 347, doi. 10.1007/s10469-016-9406-5
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- Article
The Structure of Groups Possessing Carter Subgroups of Odd Order.
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- Algebra & Logic, 2015, v. 54, n. 2, p. 105, doi. 10.1007/s10469-015-9330-0
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- Article
Groups of Induced Automorphisms and Their Application to Studying the Existence Problem for Hall Subgroups.
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- Algebra & Logic, 2014, v. 53, n. 5, p. 418, doi. 10.1007/s10469-014-9301-x
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- Article
Pronormality and Strong Pronormality of Subgroups.
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- Algebra & Logic, 2013, v. 52, n. 1, p. 15, doi. 10.1007/s10469-013-9215-z
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- Article
Cocliques of maximal size in the prime graph of a finite simple group.
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- Algebra & Logic, 2011, v. 50, n. 4, p. 291, doi. 10.1007/s10469-011-9143-8
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- Article
Normalizers of subsystem subgroups in finite groups of Lie type.
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- Algebra & Logic, 2008, v. 47, n. 1, p. 1, doi. 10.1007/s10469-008-0001-2
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- Article
Carter subgroups of finite almost simple groups.
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- Algebra & Logic, 2007, v. 46, n. 2, p. 90, doi. 10.1007/s10469-007-0010-6
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- Article
An Adjacency Criterion for the Prime Graph of a Finite Simple Group.
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- Algebra & Logic, 2005, v. 44, n. 6, p. 381, doi. 10.1007/s10469-005-0037-5
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- Article
Tunneling in Graphene/h-BN/Graphene Heterostructures through Zero-Dimensional Levels of Defects in h-BN and Their Use as Probes to Measure the Density of States of Graphene.
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- JETP Letters, 2019, v. 109, n. 7, p. 482, doi. 10.1134/S0021364019070051
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- Publication type:
- Article
Resonance Tunneling Phenomena in Two-Dimensional Multilayer van der Waals Crystalline Systems.
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- JETP Letters, 2018, v. 108, n. 9, p. 641, doi. 10.1134/S0021364018210142
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- Article
Observation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures.
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- JETP Letters, 2018, v. 107, n. 4, p. 238, doi. 10.1134/S0021364018040069
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- Article
Selective spectroscopy of tunneling transitions between the Landau levels in vertical double-gate graphene-boron nitride-graphene heterostructures.
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- JETP Letters, 2016, v. 104, n. 5, p. 334, doi. 10.1134/S0021364016170094
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- Article
Period of photoconductivity oscillations and charge dynamics of quantum dots in p- i- n GaAs/InAs/AlAs heterojunctions.
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- JETP Letters, 2015, v. 102, n. 11, p. 720, doi. 10.1134/S0021364015230071
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- Publication type:
- Article
Observation of the anomalous temperature dependence of resonance tunneling through zero-dimensional states in a quantum well with dynamic coulomb interaction between the tunneling channels.
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- JETP Letters, 2012, v. 96, n. 8, p. 529, doi. 10.1134/S0021364012200155
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- Publication type:
- Article
Erratum to: 'Formation of Nanoelectrostatic Quantum Dots and Two-Dimensional Subbands by the Random Potential of Mn Donors in p-i-n Resonant Tunneling Heterosystem,'.
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- 2011
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- Correction Notice
Formation of nanoelectrostatic quantum dots and two-dimensional subbands by the random potential of Mn donors in p-i-n resonant tunneling heterosystems.
- Published in:
- JETP Letters, 2010, v. 92, n. 5, p. 321, doi. 10.1134/S002136401017011X
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- Article
Investigation of the spatial distribution of silicon donor pairs in a GaAs quantum well.
- Published in:
- JETP Letters, 2009, v. 90, n. 6, p. 449, doi. 10.1134/S0021364009180106
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- Publication type:
- Article
Spin Splitting of the X-valley Donor Impurity States in AlAs Barriers and the Spatial Distribution of the Probability Density of Their Wave Functions.
- Published in:
- Semiconductors, 2005, v. 39, n. 10, p. 1162, doi. 10.1134/1.2085264
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- Publication type:
- Article
The Resonant Tunneling of Holes through Double-Barrier Structures with InAs QDs at the Center of a GaAs Quantum Well.
- Published in:
- Semiconductors, 2005, v. 39, n. 5, p. 543, doi. 10.1134/1.1923562
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- Publication type:
- Article