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- Title
0. 1~6 GHz 高线性度低功耗InGaP/ GaAs HBT 射频放大器.
- Authors
张 博; 李力阳
- Abstract
The MMIC RF amplifier chip was realized by 2 μm InGaP / GaAs HBT monolithic microwave integrated circuit technology. Aiming at the problem of low linearity, an adaptive linearization bias circuit was designed to improve the linearity and reduce the power consumption of the Darlington structure RF amplifier. At the same time, the total output power of the circuit was increased by enlarging the size of the amplifier tube. The simulation results show that the maximum gain in the band reaches 20 dB, and ±1. 2 dB of gain flatness. The amplifier's OIP3 can reach 34. 5 dBm, and the P-1dB is 15 dBm, the input return loss is 11. 3 dB, the output return loss is 11. 5 dB, the size of the layout is 0. 4 mm × 0. 55 mm.
- Publication
Electronic Components & Materials, 2020, Vol 39, Issue 10, p59
- ISSN
1001-2028
- Publication type
Article
- DOI
10.14106/j.cnki.1001-2028.2020.0427