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- Title
Bowing-alleviated continuous bandgap engineering of wafer-scale WS<sub>2x</sub>Se<sub>2(1-x)</sub> monolayer alloys and their assembly into hetero-multilayers.
- Authors
Kang, Hee Seong; Kang, Jung Hoon; Lee, Sol; Lee, Kihyun; Koo, Do Hyoung; Kim, Yong-Sung; Hong, Young Joon; Kim, Yong-Jin; Kim, Kwanpyo; Lee, Donghun; Lee, Chul-Ho
- Abstract
Bandgap engineering of compound semiconductors and the fabrication of bandgap-modulated heterostructures are important for enabling the development of modern optoelectronics. However, these engineering processes are challenging for two-dimensional (2D) semiconductors of transition metal dichalcogenides, particularly on a large scale. Herein, we report the wafer-scale homogeneous growth of composition-modulated WS2xSe2(1-x) alloys with a continuously tunable bandgap using metal–organic chemical vapor deposition. Well-optimized growth produces monolayer films with excellent homogeneity over the entire wafer. The substitutional atomic chalcogen (S, Se) concentration in WS2xSe2(1-x) alloys is precisely controlled by varying the flow rate of the metal–organic precursors, leading to a bandgap modulation from 1.67 to 2.05 eV, as determined from absorbance spectra. Notably, the optical bandgap of WS2xSe2(1-x) alloys exhibits a nearly linear relationship with the chalcogen composition, implying a low bowing effect. This bowing-alleviated bandgap modulation is attributed to the small lattice mismatch, strain relaxation, and thermodynamic miscibility in the WS2xSe2(1-x) alloys, as confirmed by density-functional theory calculations. Furthermore, the fabrication of hetero-multilayers by stacking differently alloyed films is demonstrated. The produced heterostructure film exhibits a broad spectral absorbance distinct from that of the individual layers. The findings of this study provide insights for the advancement of versatile design of functional 2D optoelectronics. The wafer-scale homogeneous growth of WS2xSe2(1-x) monolayer alloys with full-range composition and bandgap modulation is demonstrated using metal–organic chemical vapor deposition. In these 2D TMD alloys, the bowing effect is substantially alleviated, enabling systematic bandgap modulation with the linear relationship between optical bandgap and alloying composition.
- Subjects
CHEMICAL vapor deposition; SEMICONDUCTOR manufacturing; COMPOUND semiconductors; TRANSITION metals; MONOMOLECULAR films; CHALCOGENS
- Publication
NPG Asia Materials, 2022, Vol 14, Issue 1, p1
- ISSN
1884-4049
- Publication type
Article
- DOI
10.1038/s41427-022-00437-w