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Graphene/Hexagonal Boron Nitride Composite Nanoparticles for 2D Printing Technologies.
Published in:
Advanced Engineering Materials, 2022, v. 24, n. 3, p. 1, doi. 10.1002/adem.202100917
By:
- Antonova, Irina V.;
- Shavelkina, Marina B.;
- Poteryaev, Dmitriy A.;
- Nebogatikova, Nadezhda A.;
- Ivanov, Artem I.;
- Soots, Regina A.;
- Gutakovskii, Anton K.;
- Kurkina, Irina I.;
- Volodin, Vladimir A.;
- Katarzhis, Vladimir A.;
- Ivanov, Peter P.;
- Bocharov, Alexey N.
Publication type:
Article
Synthesis of Epitaxial Structures with Two-Dimensional Si Layers Embedded in a CaF2 Dielectric Matrix.
Published in:
JETP Letters, 2022, v. 116, n. 9, p. 628, doi. 10.1134/S0021364022602159
By:
- Zinovyev, V. A.;
- Zinovieva, A. F.;
- Volodin, V. A.;
- Gutakovskii, A. K.;
- Deryabin, A. S.;
- Krupin, A. Yu.;
- Kulik, L. V.;
- Zhivulko, V. D.;
- Mudryi, A. V.;
- Dvurechenskii, A. V.
Publication type:
Article
Hemozoin "knobs" in Opisthorchis felineus infected liver.
Published in:
Parasites & Vectors, 2015, v. 8, n. 1, p. 1, doi. 10.1186/s13071-015-1061-5
By:
- Pershina, Alexandra G.;
- Saltykova, Irina V.;
- Ivanov, Vladimir V.;
- Perina, Ekaterina A.;
- Demin, Alexander M.;
- Shevelev, Oleg B.;
- Buzueva, Irina I.;
- Gutakovskii, Anton K.;
- Vtorushin, Sergey V.;
- Ganebnykh, Ilya N.;
- Krasnov, Victor P.;
- Sazonov, Alexey E.;
- Ogorodova, Ludmila M.
Publication type:
Article
The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation.
Published in:
Microscopy & Microanalysis, 2013, v. 19, n. S5, p. 38, doi. 10.1017/S1431927613012294
By:
- Fedina, Ludmila I.;
- Song, Se Ahn;
- Chuvilin, Andrey L.;
- Gutakovskii, Anton K.;
- Latyshev, Alexander V.
Publication type:
Article
High-Resolution Electron Microscopy Investigations of Structure and Morphology of Cadmium Selenide Nanocrystals.
Published in:
Russian Physics Journal, 2018, v. 61, n. 3, p. 509, doi. 10.1007/s11182-018-1427-1
By:
- Nedomolkina, A. A.;
- Gutakovskii, A. K.
Publication type:
Article
Experimental observation of motion of edge dislocations in Ge/GeSi/Si(001) ( x = 0.2-0.6) heterostructures.
Published in:
Journal of Experimental & Theoretical Physics, 2016, v. 123, n. 5, p. 832, doi. 10.1134/S1063776116110042
By:
- Bolkhovityanov, Yu.;
- Gutakovskii, A.;
- Deryabin, A.;
- Sokolov, L.
Publication type:
Article
Interface Phonons in Semiconductor Nanostructures with Quantum Dots.
Published in:
Journal of Experimental & Theoretical Physics, 2005, v. 101, n. 3, p. 554, doi. 10.1134/1.2103225
By:
- Ladanov, M. Yu.;
- Milekhin, A. G.;
- Toropov, A. I.;
- Bakarov, A. K.;
- Gutakovskii, A. K.;
- Tenne, D. A.;
- Schulze, S.;
- Zahn, D. R. T.
Publication type:
Article
Peculiarities of structure, morphology, and electrochemistry of the doped 5-V spinel cathode materials LiNiMnMO (M = Co, Cr, Ti; x+ y = 0.05) prepared by mechanochemical way.
Published in:
Journal of Solid State Electrochemistry, 2016, v. 20, n. 1, p. 235, doi. 10.1007/s10008-015-3015-4
By:
- Kosova, N.;
- Bobrikov, I.;
- Podgornova, O.;
- Balagurov, A.;
- Gutakovskii, A.
Publication type:
Article
LiVPOF/LiV(PO) nanostructured composite cathode materials prepared via mechanochemical way.
Published in:
Journal of Solid State Electrochemistry, 2014, v. 18, n. 5, p. 1389, doi. 10.1007/s10008-013-2213-1
By:
- Kosova, Nina;
- Devyatkina, Evgeniya;
- Slobodyuk, Arseny;
- Gutakovskii, Anton
Publication type:
Article
Effect of synthesis conditions on the structure and properties of new SiC<italic>x</italic>N<italic>y</italic>M<italic>z</italic> materials for spintronics.
Published in:
Journal of Structural Chemistry, 2017, v. 58, n. 8, p. 1493, doi. 10.1134/S0022476617080030
By:
- Fainer, N. I.;
- Pushkarev, R. V.;
- Shestakov, V. A.;
- Gutakovskii, A. K.
Publication type:
Article
Preparation of thin films of platinum group metals by pulsed MOCVD. II. Deposition of Ru layers.
Published in:
Journal of Structural Chemistry, 2012, v. 53, n. 4, p. 725, doi. 10.1134/S0022476612040154
By:
- Morozova, N.;
- Gelfond, N.;
- Semyannikov, P.;
- Trubin, S.;
- Igumenov, I.;
- Gutakovskii, A.;
- Latyshev, A.
Publication type:
Article
Preparation of thin films of platinum group metals by pulsed MOCVD. I. Deposition of Ir layers.
Published in:
Journal of Structural Chemistry, 2012, v. 53, n. 4, p. 715, doi. 10.1134/S0022476612040142
By:
- Gelfond, N.;
- Morozova, N.;
- Semyannikov, P.;
- Trubin, S.;
- Igumenov, I.;
- Gutakovskii, A.;
- Latyshev, A.
Publication type:
Article
Nanocrystalline Silicon Films Formed under the Impact of Pulsed Excimer Laser Radiation on Polyimide Substrates.
Published in:
Technical Physics Letters, 2003, v. 29, n. 7, p. 569, doi. 10.1134/1.1598552
By:
- Efremov, M. D.;
- Volodin, V. A.;
- Fedina, L. I.;
- Gutakovskiı, A. A.;
- Marin, D. V.;
- Kochubeı, S. A.;
- Popov, A. A.;
- Minakov, Yu. A.;
- Ulasyuk, V. N.
Publication type:
Article
Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide–germanium–gallium-arsenide(001) system.
Published in:
Technical Physics Letters, 1998, v. 24, n. 12, p. 949, doi. 10.1134/1.1262328
By:
- Gutakovskiı, A. K.;
- Katkov, A. V.;
- Katkov, M. I.;
- Pchelyakov, O. P.;
- Revenko, M. A.
Publication type:
Article
MBE-grown InSb photodetector arrays.
Published in:
Technical Physics, 2017, v. 62, n. 6, p. 915, doi. 10.1134/S1063784217060044
By:
- Bakarov, A.;
- Gutakovskii, A.;
- Zhuravlev, K.;
- Kovchavtsev, A.;
- Toropov, A.;
- Burlakov, I.;
- Boltar', K.;
- Vlasov, P.;
- Lopukhin, A.
Publication type:
Article
Enhancement of the Si p-n diode NIR photoresponse by embedding β-FeSi2 nanocrystallites.
Published in:
Scientific Reports, 2015, p. 1, doi. 10.1038/srep14795
By:
- Shevlyagin, A. V.;
- Goroshko, D. L.;
- Chusovitin, E. A.;
- Galkin, K. N.;
- Galkin, N. G.;
- Gutakovskii, A. K.
Publication type:
Article
Aluminum-induced crystallization of silicon suboxide thin films.
Published in:
Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 9, p. 1, doi. 10.1007/s00339-018-2070-y
By:
- Zamchiy, A. O.;
- Baranov, E. A.;
- Khmel, S. Ya.;
- Volodin, V. A.;
- Vdovin, V. I.;
- Gutakovskii, A. K.
Publication type:
Article
Bimetallic Pt,Ir-containing coatings formed by MOCVD for medical applications.
Published in:
Journal of Materials Science: Materials in Medicine, 2019, v. 30, n. 6, p. N.PAG, doi. 10.1007/s10856-019-6275-1
By:
- Dorovskikh, Svetlana I.;
- Vikulova, Evgeniia S.;
- Kal'nyi, Danila B.;
- Shubin, Yury V.;
- Asanov, Igor. P.;
- Maximovskiy, Evgeniy A.;
- Gutakovskii, Anton K.;
- Morozova, Natalya B.;
- Basova, Tamara V.
Publication type:
Article
Ion-Beam Synthesis of Structure-Oriented Iron Nanoparticles in Single-Crystalline Rutile TiO 2.
Published in:
Crystals (2073-4352), 2023, v. 13, n. 2, p. 355, doi. 10.3390/cryst13020355
By:
- Vakhitov, Iskander R.;
- Lyadov, Nikolay M.;
- Vdovin, Vladimir I.;
- Gutakovskii, Anton K.;
- Nuzhdin, Vladimir I.;
- Tagirov, Lenar R.;
- Khaibullin, Rustam I.
Publication type:
Article
Preparation of Monolayers of Nanoparticles for Transmission Electron Microscopy.
Published in:
Technical Physics, 2000, v. 45, n. 6, p. 783
By:
- Vorob’ev, A. B.;
- Gutakovskiı, A. K.;
- Prinz, V. Ya.;
- Seleznev, V. A.
Publication type:
Article
GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1143, doi. 10.1134/S1063782619090021
By:
- Abramkin, D. S.;
- Petrushkov, M. O.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Emelyanov, E. A.;
- Preobrazhenskii, V. V.;
- Gutakovskii, A. K.;
- Shamirzaev, T. S.
Publication type:
Article
Spinodal Decomposition in InSb/AlAs Heterostructures.
Published in:
Semiconductors, 2018, v. 52, n. 11, p. 1392, doi. 10.1134/S1063782618110027
By:
- Abramkin, D. S.;
- Bakarov, A. K.;
- Gutakovskii, A. K.;
- Shamirzaev, T. S.
Publication type:
Article
Formation of low-dimensional structures in the InSb/AlAs heterosystem.
Published in:
Semiconductors, 2017, v. 51, n. 9, p. 1233, doi. 10.1134/S1063782617090020
By:
- Abramkin, D.;
- Bakarov, A.;
- Putyato, M.;
- Emelyanov, E.;
- Kolotovkina, D.;
- Gutakovskii, A.;
- Shamirzaev, T.
Publication type:
Article
Strained multilayer structures with pseudomorphic GeSiSn layers.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1584, doi. 10.1134/S106378261612023X
By:
- Timofeev, V.;
- Nikiforov, A.;
- Tuktamyshev, A.;
- Yesin, M.;
- Mashanov, V.;
- Gutakovskii, A.;
- Baidakova, N.
Publication type:
Article
Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation.
Published in:
Semiconductors, 2015, v. 49, n. 6, p. 749, doi. 10.1134/S1063782615060238
By:
- Smagina, Zh.;
- Dvurechenskii, A.;
- Seleznev, V.;
- Kuchinskaya, P.;
- Armbrister, V.;
- Zinovyev, V.;
- Stepina, N.;
- Zinovieva, A.;
- Nenashev, A.;
- Gutakovskii, A.
Publication type:
Article
New system of self-assembled GaSb/GaP quantum dots.
Published in:
Semiconductors, 2012, v. 46, n. 12, p. 1534, doi. 10.1134/S1063782612120020
By:
- Abramkin, D.;
- Putyato, M.;
- Gutakovskii, A.;
- Semyagin, B.;
- Preobrazhenskii, V.;
- Shamirzaev, T.
Publication type:
Article
Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen.
Published in:
Semiconductors, 2009, v. 43, n. 9, p. 1235, doi. 10.1134/S1063782609090243
By:
- Putuato, M. A.;
- Bolkhovityanov, Yu. B.;
- Vasilenko, A. P.;
- Gutakovskii, A. K.
Publication type:
Article
CVD SYNTHESIS AND THE STRUCTURE OF VERTICALLY ALIGNED CNT ARRAYS.
Published in:
Journal of Structural Chemistry, 2022, v. 63, n. 7, p. 1145, doi. 10.1134/S0022476622070095
By:
- Semenova, O. I.;
- Fedina, L. I.;
- Gutakovskii, A. K.;
- Sitnikov, S. V.;
- Kurus, N. N.;
- Dudin, A. A.;
- Pavlov, A. A.;
- Sheglov, D. V.
Publication type:
Article
Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots.
Published in:
JETP Letters, 2019, v. 109, n. 4, p. 270, doi. 10.1134/S0021364019040143
By:
- Zinovieva, A. F.;
- Zinovyev, V. A.;
- Stepina, N. P.;
- Katsuba, A. V.;
- Dvurechenskii, A. V.;
- Gutakovskii, A. K.;
- Kulik, L. V.;
- Bogomyakov, A. S.;
- Erenburg, S. B.;
- Trubina, S. V.;
- Voelskow, M.
Publication type:
Article
Structure of Hf0.9La0.1O2 Ferroelectric Films Obtained by the Atomic Layer Deposition.
Published in:
JETP Letters, 2019, v. 109, n. 2, p. 116, doi. 10.1134/S0021364019020115
By:
- Perevalov, T. V.;
- Gritsenko, V. A.;
- Gutakovskii, A. K.;
- Prosvirin, I. P.
Publication type:
Article
Strain in Ultrathin SiGeSn Layers in a Silicon Matrix.
Published in:
JETP Letters, 2017, v. 106, n. 12, p. 780, doi. 10.1134/S0021364017240092
By:
- Gutakovskii, A. K.;
- Talochkin, A. B.
Publication type:
Article
Nature of luminescence of PbS quantum dots synthesized in a Langmuir-Blodgett matrix.
Published in:
JETP Letters, 2017, v. 106, n. 1, p. 18, doi. 10.1134/S0021364017130082
By:
- Gulyaev, D.;
- Batsanov, S.;
- Gutakovskii, A.;
- Zhuravlev, K.
Publication type:
Article
Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures.
Published in:
JETP Letters, 2016, v. 103, n. 11, p. 692, doi. 10.1134/S0021364016110023
By:
- Abramkin, D.;
- Rumynin, K.;
- Bakarov, A.;
- Kolotovkina, D.;
- Gutakovskii, A.;
- Shamirzaev, T.
Publication type:
Article
Coexistence of type-I and type-II band alignment in Ga(Sb, P)/GaP heterostructures with pseudomorphic self-assembled quantum dots.
Published in:
JETP Letters, 2014, v. 99, n. 2, p. 76, doi. 10.1134/S0021364014020027
By:
- Abramkin, D.;
- Shamirzaev, V.;
- Putyato, M.;
- Gutakovskii, A.;
- Shamirzaev, T.
Publication type:
Article
Novel self-assembled quantum dots in the GaSb/AlAs heterosystem.
Published in:
JETP Letters, 2012, v. 95, n. 10, p. 534, doi. 10.1134/S0021364012100104
By:
- Shamirzaev, T.;
- Abramkin, D.;
- Gutakovskii, A.;
- Putyato, M.
Publication type:
Article
Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions.
Published in:
JETP Letters, 2010, v. 92, n. 6, p. 388, doi. 10.1134/S0021364010180062
By:
- Teys, S.;
- Trukhanov, E.;
- Ilin, A.;
- Gutakovskii, A.;
- Kolesnikov, A.
Publication type:
Article
Magnetic field-induced dissipation-free state in superconducting nanostructures.
Published in:
Nature Communications, 2013, v. 4, n. 2, p. 1437, doi. 10.1038/ncomms2437
By:
- Córdoba, R.;
- Baturina, T. I.;
- Sesé, J.;
- Yu Mironov, A.;
- De Teresa, J. M.;
- Ibarra, M. R.;
- Nasimov, D. A.;
- Gutakovskii, A. K.;
- Latyshev, A. V.;
- Guillamón, I.;
- Suderow, H.;
- Vieira, S.;
- Baklanov, M. R.;
- Palacios, J. J.;
- Vinokur, V. M.
Publication type:
Article
Effect of the ion-energy loss rate on defect formation during implantation in silicon nanocrystals.
Published in:
Semiconductors, 2008, v. 42, n. 9, p. 1127, doi. 10.1134/S1063782608090224
By:
- Kachurin, G. A.;
- Cherkova, S. G.;
- Marin, D. V.;
- Gutakovskiǐ, A. K.;
- Cherkov, A. G.;
- Volodin, V. A.
Publication type:
Article
Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition.
Published in:
Semiconductors, 2008, v. 42, n. 1, p. 1, doi. 10.1134/S1063782608010016
By:
- Bolkhovityanov, Yu.;
- Gutakovskii, A.;
- Deryabin, A.;
- Pchelyakov, O.;
- Sokolov, L.
Publication type:
Article
Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant.
Published in:
Semiconductors, 2007, v. 41, n. 10, p. 1234, doi. 10.1134/S106378260710020X
By:
- Bolkhovityanov, Yu. B.;
- Deryabin, A. S.;
- Gutakovskiǐ, A. K.;
- Kolesnikov, A. V.;
- Sokolov, L. V.
Publication type:
Article
Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates.
Published in:
Semiconductors, 2007, v. 41, n. 9, p. 1067, doi. 10.1134/S1063782607090114
By:
- Galkin, N. G.;
- Goroshko, D. L.;
- Polyarnyĭ, V. O.;
- Chusovitin, E. A.;
- Gutakovskiĭ, A. K.;
- Latyshev, A. V.;
- Khang, Y.
Publication type:
Article
Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition.
Published in:
Semiconductors, 2007, v. 41, n. 3, p. 341, doi. 10.1134/S1063782607030189
By:
- Chistokhin, I. B.;
- Gutakovskiĭ, A. K.;
- Deryabin, A. S.
Publication type:
Article
Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy.
Published in:
Semiconductors, 2006, v. 40, n. 3, p. 319, doi. 10.1134/S1063782606030122
By:
- Bolkhovityanov, Yu. B.;
- Deryabin, A. S.;
- Gutakovskiĭ, A. K.;
- Revenko, M. A.;
- Sokolov, L. V.
Publication type:
Article
Effect of Quantum Confinement on Optical Properties of Ge Nanocrystals in GeO2 Films.
Published in:
Semiconductors, 2005, v. 39, n. 10, p. 1168, doi. 10.1134/1.2085265
By:
- Gorokhov, E. B.;
- Volodin, V. A.;
- Marin, D. V.;
- Orekhov, D. A.;
- Cherkov, A. G.;
- Gutakovskiı, A. K.;
- Shvets, V. A.;
- Borisov, A. G.;
- Efremov, M. D.
Publication type:
Article
X-Ray-Emission Study of the Structure of Si:H Layers Formed by Low-Energy Hydrogen-Ion Implantation.
Published in:
Semiconductors, 2002, v. 36, n. 5, p. 568, doi. 10.1134/1.1478550
By:
- Galakhov, V. R.;
- Antonova, I. V.;
- Shamin, S. N.;
- Aksenova, V. I.;
- Obodnikov, V. I.;
- Gutakovskiı, A. K.;
- Popov, V. P.
Publication type:
Article
Influence of the Misfit-Dislocation Screw Component on the Formation of Threading Dislocations in Semiconductor Heterostructures.
Published in:
Semiconductors, 2002, v. 36, n. 3, p. 290, doi. 10.1134/1.1461406
By:
- Trukhanov, E. M.;
- Kolesnikov, A. V.;
- Vasilenko, A. P.;
- Gutakovskiı, A. K.
Publication type:
Article
Electrical Conductivity of Silicon-on-Insulator Structures Prepared by Bonding Silicon Wafers to a Substrate Using Hydrogen Implantation.
Published in:
Semiconductors, 2000, v. 34, n. 9, p. 1054, doi. 10.1134/1.1309421
By:
- Antonova, I. V.;
- Stas’, V. F.;
- Popov, V. P.;
- Obodnikov, V. I.;
- Gutakovskiı, A. K.
Publication type:
Article
The Influence of Irradiation and Subsequent Annealing on Si Nanocrystals Formed in SiO[sub 2] Layers.
Published in:
Semiconductors, 2000, v. 34, n. 8, p. 965, doi. 10.1134/1.1188109
By:
- Kachurin, G. A.;
- Yanovskaya, S. G.;
- Ruault, M.-O.;
- Gutakovskiı, A. K.;
- Zhuravlev, K. S.;
- Kaitasov, O.;
- Bernas, H.
Publication type:
Article
Effect of ion dose and annealing mode on photoluminescence from SiO[sub 2] implanted with Si ions.
Published in:
Semiconductors, 1998, v. 32, n. 11, p. 1222, doi. 10.1134/1.1187595
By:
- Kachurin, G. A.;
- Leıer, A. F.;
- Zhuravlev, K. S.;
- Tyschenko, I. E.;
- Gutakovskiı, A. K.;
- Volodin, V. A.;
- Skorupa, W.;
- Yankov, R. A.
Publication type:
Article
Photoluminescence of SiO[sub 2] layers implanted with Si[sup +] ions and annealed in a pulsed regime.
Published in:
Semiconductors, 1997, v. 31, n. 6, p. 626, doi. 10.1134/1.1187231
By:
- Kachurin, G. A.;
- Tyschenko, I. E.;
- Zhuravlev, K. S.;
- Pazdnikov, N. A.;
- Volodin, V. A.;
- Gutakovskiı, A. K.;
- Leıer, A. F.;
- Skorupa, W.;
- Yankov, R. A.
Publication type:
Article

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