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- Title
Thermal Stability and Oxidation of Group IV Terminated (100) Diamond Surfaces.
- Authors
Sear, Michael J.; Schenk, Alex K.; Tadich, Anton; Stacey, Alastair; Pakes, Chris I.
- Abstract
High resolution X‐ray photoelectron spectroscopy is used to explore the thermal stability of as‐prepared and oxidized silicon and germanium‐terminated (100) diamond surfaces which form two domain (3 × 1) surface reconstructions. The as‐prepared germanium and silicon‐terminated surfaces are stable up to 1200 °C, making them the most thermally stable surface termination for diamond (100). The oxidized forms of these surfaces can be created via exposure to O2, H2O or atmospheric conditions and retain the (3 × 1) surface symmetry. The thermal stability of the oxidized surfaces exhibit differing behavior. A 700 °C anneal is sufficient to liberate oxygen from the germanium‐oxide‐terminated (100) diamond surface, leaving the pristine germanium‐terminated surface, while the silicon‐oxide‐terminated surface is thermally stable up to 1200 °C, at which point both silicon and oxygen are removed. The thermal stability of silicon and germanium‐terminated (100) diamond, which forms atomically ordered surfaces with (3 × 1) symmetry, is explored using high resolution X‐ray photoelectron spectroscopy. The germanium, silicon, and silicon‐oxide‐terminated surfaces are shown to be stable to a temperature of 1200 °C, improving the stability of the (100) surface under high temperature processing compared to the hydrogenated and bare surfaces.
- Subjects
THERMAL stability; OXIDATION; DIAMONDS; GERMANIUM; SILICON
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2018, Vol 215, Issue 22, pN.PAG
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201800283