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- Title
Monolithic cyan − violet InGaN/GaN LED array.
- Authors
Dróżdż, Piotr A.; Sarzyński, Marcin; Domagała, Jarosław Z.; Grzanka, Ewa; Grzanka, Szymon; Czernecki, Robert; Marona, Łucja; Korona, Krzysztof P.; Suski, Tadeusz
- Abstract
In the case of InGaN alloys grown by metalorganic vapour phase epitaxy on a c-plane GaN, indium content decreases as the substrate miscut is increased. This phenomenon has been previously used to fabricate laser diodes with variable wavelength on one chip [Appl. Phys. Express 5, 021001 (2012)]. In that work, however, wavelength variation was only 5 nm. In the present work we show independent, electrically driven array of light emitting diodes (LED), covering 40 nm emission wavelength range on one chip. This is achieved by a particular patterning technique, which enables the change in the local miscut of the substrate by introducing large enough slopes for practical devices. This technological approach offers a new degree of freedom for InGaN/GaN bandgap modification and device engineering. It can be applied to freestanding GaN as well as to GaN/sapphire templates used for mass production of LEDs. Once optimized, this approach could eventually lead to truly monolithic RGB LEDs.
- Subjects
LIGHT emitting diodes; INDIUM gallium nitride; GALLIUM nitride; VAPOR phase epitaxial growth; METAL-organic frameworks
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2017, Vol 214, Issue 8, pn/a
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201600815