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- Title
2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si.
- Authors
Vanhellemont, J.; Yasuda, H.; Tokumoto, Y.; Ohno, Y.; Suezawa, M.; Yonenaga, I.
- Abstract
First results are presented of a study on the impact of O and Ge doping on {113}-defect formation in Si using in situ 2 MeV e-irradiation in a high voltage electron microscope. Comparison with undoped Si, reveals a suppression of {113}-defect formation due to O and Ge. The observations are discussed in the frame of a theoretical model assuming quasi-chemical reactions to describe the intrinsic point defect behaviour during irradiation as a function of irradiation temperature and specimen thickness. It is shown that for irradiations at high temperatures, intrinsic point defect diffusivity values derived from crystal growth and metal diffusion experiments can be used to explain the observations semi-quantitatively.
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2012, Vol 209, Issue 10, p1902
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201200023