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- Title
Investigation of arsenic-doped ZnO thin films grown on Si substrate by atmospheric-pressure metal-organic chemical vapor deposition.
- Authors
Hung, S. C.; Wang, K. J.; Lan, S. M.; Yang, T. N.; Uen, W. Y.; Chi, G. C.
- Abstract
Zinc oxide (ZnO) thin film was grown on semi-insulating Si substrate using arsine (AsH3) as precursor by atmospheric-pressure metal-organic chemical vapor deposition (AP-MOCVD). In recently reported results, the physical mechanisms for As-doped ZnO thin films are explained as As substitution for oxygen (AsO) or As substitution for Zn and As combined with two Zn vacancies (AsZn-2VZn). In this study, we control the in situ annealing ambient into two environments with various temperatures, which are Zn-rich, using diethylzinc (DEZn) as ambient gas, and O-rich, using water vapor as ambient gas, respectively. This should help to create AsO and AsZn-2VZn. The ZnO thin film after in situ thermal annealing with H2O vapor ambient at 550 and 750 °C show p-type conductivity with hole concentration of 2.651 × 1017 and 1.782 × 1018 cm−3, Hall mobilities of 10.08 and 5.402 cm2/V s, and resistivities of 2.368 and 0.6485 Ω cm, respectively.
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2012, Vol 209, Issue 6, p1053
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201127318