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- Title
Effect of Sn content on the structural and photoelectric properties of IATO films.
- Authors
Du, Xuejian; Wang, Weiguang; Wang, Mingxian; Feng, Xianjin; Ma, Jin
- Abstract
Indium aluminum tin oxide (IATO) films with high Hall mobility have been deposited on the SiO (0001) substrates by metal organic chemical vapor deposition. The structural, morphological, and optoelectronic properties of the IATO films with Sn contents varied from 0 to 18 % [Sn/(In+Al+Sn) atomic ratio] were studied in detail. Well-crystallized IATO film with the highest Hall mobility of 15.59 cm V s was obtained at 15 % of Sn content, and the corresponding carrier concentration and resistivity were about 2.38 × 10 and 1.51 × 10 Ω cm, respectively. The average transmittance for all the obtained films in the visible range was over 81 %, and the optical band gap of the films changed in the range of 4.05-5.03 eV.
- Subjects
TIN alloys; PHOTOELECTRICITY; TIN oxides; METALLIC films; HALL mobility; THIN film deposition; METAL organic chemical vapor deposition; BAND gaps
- Publication
Journal of Materials Science, 2017, Vol 52, Issue 1, p367
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1007/s10853-016-0337-2