Found: 13
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The Unique EELS Signature of Point Defects in Cubic Boron Nitride on Diamond.
- Published in:
- 2023
- By:
- Publication type:
- Abstract
Structural, Optical, and Electrical Characterization of Monoclinic β-GaO Grown by MOVPE on Sapphire Substrates.
- Published in:
- Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2031, doi. 10.1007/s11664-016-4346-3
- By:
- Publication type:
- Article
Mode-locked 2- μm wavelength fiber laser using a graphene-saturable absorber.
- Published in:
- Optical Engineering, 2013, v. 52, n. 7, p. 1, doi. 10.1117/1.OE.52.7.076101
- By:
- Publication type:
- Article
Better and Worse: A Dual-Process Model of the Relationship between Core Self-evaluation and Work-Family Conflict.
- Published in:
- Frontiers in Psychology, 2016, v. 7, p. 1, doi. 10.3389/fpsyg.2016.01579
- By:
- Publication type:
- Article
Hybrid longitudinal-transverse phonon polaritons.
- Published in:
- Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-09414-4
- By:
- Publication type:
- Article
Observation of a transition to a localized ultrasonic phase in soft matter.
- Published in:
- Communications Physics, 2022, v. 5, n. 1, p. 1, doi. 10.1038/s42005-021-00795-x
- By:
- Publication type:
- Article
Experimental demonstration of dynamic thermal regulation using vanadium dioxide thin films.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41598-020-70931-0
- By:
- Publication type:
- Article
High‐Temperature Operation of Al<sub>x</sub>Ga<sub>1−x</sub>N (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900802
- By:
- Publication type:
- Article
Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900675
- By:
- Publication type:
- Article
Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900675
- By:
- Publication type:
- Article
Nanocrystalline diamond capped AlGaN/GaN high electron mobility transistors via a sacrificial gate process.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 893, doi. 10.1002/pssa.201532570
- By:
- Publication type:
- Article
Water Affinity to Epitaxial Graphene: The Impact of Layer Thickness.
- Published in:
- Advanced Materials Interfaces, 2015, v. 2, n. 16, p. n/a, doi. 10.1002/admi.201500252
- By:
- Publication type:
- Article
Outbreak in Alberta of community-acquired (USA300) methicillin-resistant Staphylococcus aureus in people with a history of drug use, homelessness or incarceration.
- Published in:
- Canadian Medical Association Journal (CMAJ), 2006, v. 175, n. 2, p. 149, doi. 10.1503/cmaj.051565
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- Publication type:
- Article