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- Title
Insertion of an Ultrathin Interfacial Aluminum Layer for the Realization of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.
- Authors
Manchon, Benoît; Segantini, Greta; Baboux, Nicolas; Rojo Romeo, Pedro; Barhoumi, Rabei; Infante, Ingrid C.; Alibart, Fabien; Drouin, Dominique; Vilquin, Bertrand; Deleruyelle, Damien
- Abstract
Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by reactive magnetron sputtering is investigated. The oxidation of the interfacial layer during annealing due to scavenging of the Hf0.5Zr0.5O2 impacts both the ferroelectric properties and the electrical conductivity of the junction. It is shown that the overall conductivity of the junction is boosted 20 folds while the resistance ratio between the positive and negative polarization states is increased from 1.3 up to 3.7. Through a systematic analysis of programming conditions, pulse duration, and height, we show that both the remanent polarization and On/Off current ratio can be enhanced at the expanse of the endurance leading to a trade‐off.
- Subjects
ALUMINUM; MAGNETRON sputtering; REACTIVE sputtering; ELECTRIC conductivity; THIN films
- Publication
Physica Status Solidi - Rapid Research Letters, 2022, Vol 16, Issue 10, p1
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.202100585