We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Features of Pore Nucleation in p-Si during Its Electrochemical Etching.
- Authors
Abramova, E. N.; Khort, A. M.; Yakovenko, A. G.; Syrov, Yu. V.; Tsygankov, V. N.; Slipchenko, E. A.; Shvets, V. I.
- Abstract
Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.
- Subjects
POROUS silicon; ETCHING; NUCLEATION; NANOSILICON; ANODIC oxidation of metals; CARBON foams
- Publication
Doklady Chemistry, 2019, Vol 487, Issue 1, p165
- ISSN
0012-5008
- Publication type
Article
- DOI
10.1134/S0012500819070012