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- Title
Preparation of High-Thickness n − -Ga 2 O 3 Film by MOCVD.
- Authors
Zhao, Chunlei; Jiao, Teng; Chen, Wei; Li, Zeming; Dong, Xin; Li, Zhengda; Diao, Zhaoti; Zhang, Yuantao; Zhang, Baolin; Du, Guotong
- Abstract
The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. The film thickness reached 4.5 microns, a relatively high value for MOCVD. The full width at half maxima of the (002) diffraction plane of the film was 26.3 arcsec, thus showing high crystalline quality. The film showed n−-type properties with a doping concentration of 3.6 × 1016 cm−3 and electron mobility of 137 cm2/V·s. In addition, the element composition and stress state of the film were characterized and analyzed. This indicates that the MOCVD, supporting high-quality, high-precision epitaxy, is promising for Ga2O3 power devices.
- Subjects
CHEMICAL vapor deposition; DOPING agents (Chemistry); EPITAXY; GALLIUM nitride films
- Publication
Coatings (2079-6412), 2022, Vol 12, Issue 5, p645
- ISSN
2079-6412
- Publication type
Article
- DOI
10.3390/coatings12050645