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- Title
Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In<sub> x</sub>Ga<sub>1 − x</sub> N/GaN quantum wells.
- Authors
Mezdrogina, M. M.; Krivolapchuk, V. V.; Petrov, V. N.; Kozhanova, Yu. V.; Danilovski, E. Yu.; Kuz'min, R. V.
- Abstract
Effect of doping with europium on the shape of the spectra of emission from structures with quantum wells based on In xGa1− xN/GaN, on the mechanism of doping, and the intensity of emission caused by intracenter f-f transitions in Eu is studied. According to the data of Mössbauer spectroscopy, the doping Eu impurity can have the charge state of the impurity ion of Eu2+ and Eu3+ or Eu3+ only. In the case where the charge state of the impurity ion is Eu3+, emission related to the intracenter transitions 5 D0−7 F2 (λ = 6220 Å) is observed. If the impurity ion can be found in the charge states Eu2+ and Eu3+, the emission related to the intracenter transitions characteristic of both Eu2+ and Eu3+ is not observed.
- Subjects
SEMICONDUCTOR doping; EUROPIUM; QUANTUM wells; ENERGY-band theory of solids; IONS; SPECTRUM analysis
- Publication
Semiconductors, 2009, Vol 43, Issue 4, p447
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782609040083