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Anomalous dynamic characteristics of semiconductor quantum-dot lasers generating on two quantum states.
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- Technical Physics Letters, 2007, v. 33, n. 1, p. 4, doi. 10.1134/S1063785007010026
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- Article
The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System.
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- Technical Physics Letters, 2004, v. 30, n. 4, p. 272, doi. 10.1134/1.1748597
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High-Power Single-Mode 1.3-μm Lasers Based on InAs/AlGaAs/GaAs Quantum Dot Heterostructures.
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- Technical Physics Letters, 2004, v. 30, n. 1, p. 9, doi. 10.1134/1.1646701
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Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100).
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- Technical Physics Letters, 2003, v. 29, n. 8, p. 691, doi. 10.1134/1.1606790
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Optical studies of a two-dimensional photonic crystal with the InAs/InGaAs quantum-dot structure as an active region.
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- Semiconductors, 2006, v. 40, n. 7, p. 812, doi. 10.1134/S1063782606070141
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- Article
Higher harmonics in the current oscillations in weakly coupled GaAs/AlGaAs superlattices.
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- Semiconductors, 2006, v. 40, n. 7, p. 825, doi. 10.1134/S1063782606070165
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- Article
Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures.
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- Semiconductors, 2006, v. 40, n. 1, p. 84, doi. 10.1134/S1063782606010155
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Optical Phenomena in InAs/GaAs Heterostructures with Doped Quantum Dots and Artificial Molecules.
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- Semiconductors, 2005, v. 39, n. 1, p. 50, doi. 10.1134/1.1852644
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Spectroscopy of Exciton States of InAs Quantum Molecules.
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- Semiconductors, 2004, v. 38, n. 6, p. 696, doi. 10.1134/1.1766375
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Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range.
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- Semiconductors, 2004, v. 38, n. 6, p. 727, doi. 10.1134/1.1766380
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- Article
High-Power 1.5 μm InAs–InGaAs Quantum Dot Lasers on GaAs Substrates.
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- Semiconductors, 2004, v. 38, n. 6, p. 732, doi. 10.1134/1.1766381
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- Article
Design and Technology of Vertical-Cavity Surface-Emitting Lasers with Nonconducting Epitaxial Mirrors.
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- Semiconductors, 2003, v. 37, n. 10, p. 1234, doi. 10.1134/1.1619524
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Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29μm.
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- Semiconductors, 2003, v. 37, n. 10, p. 1239, doi. 10.1134/1.1619525
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Dependence of the Binding Energy of A(+) Centers on Quantum-Well Width in GaAs/AlGaAs Structures.
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- Semiconductors, 2003, v. 37, n. 9, p. 1090, doi. 10.1134/1.1610125
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- Article
Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.
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- Semiconductors, 2003, v. 37, n. 9, p. 1104, doi. 10.1134/1.1610128
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Metamorphic Lasers for 1.3-μm Spectral Range Grown on GaAs Substrates by MBE.
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- Semiconductors, 2003, v. 37, n. 9, p. 1119, doi. 10.1134/1.1610131
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- Article
Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold.
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- Semiconductors, 2003, v. 37, n. 1, p. 112, doi. 10.1134/1.1538549
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- Article
Manifestation of A(+) Centers in the Luminescence of Two-Dimensional GaAs/AlGaAs Structures.
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- Semiconductors, 2002, v. 36, n. 8, p. 929, doi. 10.1134/1.1500474
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Structure of Heterointerfaces and Photoluminescence Properties of GaAs/AlAs Superlattices Grown on (311)A and (311)B Surfaces: Comparative Analysis.
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- Semiconductors, 2002, v. 36, n. 8, p. 895, doi. 10.1134/1.1500467
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Wavelength of Emission from InGaAsN Quantum Wells as a Function of Composition of the Quaternary Compound.
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- Semiconductors, 2002, v. 36, n. 8, p. 899, doi. 10.1134/1.1500468
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INTERSUBBAND SPECTROSCOPY IN QUANTUM WELL STRUCTURES AT HIGH NONEQUILIBRIUM CARRIER DENSITIES.
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- International Journal of Nanoscience, 2003, v. 2, n. 6, p. 445, doi. 10.1142/S0219581X03001541
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HOT PHOTOLUMINESCENCE STUDY OF MINIBAND EFFECTS IN GaAs/AlAsSLs.
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- International Journal of Nanoscience, 2003, v. 2, n. 6, p. 383, doi. 10.1142/S0219581X03001474
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EXCITED STATE PHOTOLUMINESCENCE IN STEPPED InGaAs/AlGaAs QUANTUM WELLS UNDER PICOSECOND EXCITATION.
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- International Journal of Nanoscience, 2003, v. 2, n. 6, p. 427, doi. 10.1142/S0219581X03001528
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OPTICALLY-DETECTED MICROWAVE RESONANCE IN InGaAsN/GaAs QUANTUM WELLS AND InAs/GaAs QUANTUM DOTS EMITTING AROUND 1.3 μm.
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- International Journal of Nanoscience, 2003, v. 2, n. 6, p. 469, doi. 10.1142/S0219581X03001577
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Electronic Structure of GaAs<sub>1-x</sub>N<sub>x</sub> Alloy by Soft-X-Ray Absorption and Emission: Origin of the Reduced Optical Efficiency.
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- Physica Status Solidi (B), 2002, v. 233, n. 1, p. R1, doi. 10.1002/1521-3951(200209)233:1<R1::AID-PSSB99991>3.0.CO;2-Q
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Low-Temperature Hopping Transport over the Upper Hubbard Band in p-GaAs/AlGaAs Structures.
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- Physica Status Solidi (B), 2002, v. 230, n. 1, p. 171, doi. 10.1002/1521-3951(200203)230:1<171::AID-PSSB171>3.0.CO;2-3
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Large Spectral Splitting of TE and TM Components of QDs in a Microcavity.
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- Physica Status Solidi (B), 2001, v. 224, n. 3, p. 811, doi. 10.1002/(SICI)1521-3951(200104)224:3<811::AID-PSSB811>3.0.CO;2-X
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- Article
Radiative Inter-Sublevel Transitions in InGaAs/AlGaAs Quantum Dots.
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- Physica Status Solidi (B), 2001, v. 224, n. 3, p. 833, doi. 10.1002/(SICI)1521-3951(200104)224:3<833::AID-PSSB833>3.0.CO;2-H
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- Article
InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25-1.33 μm Wavelength Range.
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- Physica Status Solidi (B), 2001, v. 224, n. 3, p. 803, doi. 10.1002/(SICI)1521-3951(200104)224:3<803::AID-PSSB803>3.0.CO;2-T
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Novel Infrared Quantum Dot Lasers: Theory and Reality.
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- Physica Status Solidi (B), 2001, v. 224, n. 3, p. 787, doi. 10.1002/(SICI)1521-3951(200104)224:3<787::AID-PSSB787>3.0.CO;2-M
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Dynamical Redistribution of Mean Electron Spin over the Energy Spectrum of Quantum Dots.
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- Physica Status Solidi (B), 2001, v. 224, n. 2, p. 567, doi. 10.1002/1521-3951(200103)224:2<567::AID-PSSB567>3.0.CO;2-3
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Entropy-Driven Effects in Self-Organized Formation of Quantum Dots.
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- Physica Status Solidi (B), 2001, v. 224, n. 2, p. 503, doi. 10.1002/1521-3951(200103)224:2<503::AID-PSSB503>3.0.CO;2-6
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Time-Resolved Capacitance Spectroscopy of Hole and Electron Levels in InAs/GaAs Quantum Dots.
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- Physica Status Solidi (B), 2001, v. 224, n. 1, p. 57, doi. 10.1002/1521-3951(200103)224:1<57::AID-PSSB57>3.0.CO;2-R
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Radiative Recombination Features of Metastable Quantum Dot Array.
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- Physica Status Solidi (B), 2001, v. 224, n. 1, p. 101, doi. 10.1002/1521-3951(200103)224:1<101::AID-PSSB101>3.0.CO;2-V
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Spin Repolarization Due to Pauli Blocking in Quantum Dots.
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- Physica Status Solidi (B), 2000, v. 221, n. 1, p. 71, doi. 10.1002/1521-3951(200009)221:1<71::AID-PSSB71>3.0.CO;2-K
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