Back to matchesWe found a matchYour institution may have rights to this item. Sign in to continue.TitleCalculation of the Schottky barrier height at the early stage of formation of the (silicon carbide)-(metallic submonolayer) contactAuthorsDavydov, S. Yu.; Lebedev, A. A.; Tikhonov, S. K.PublicationSemiconductors, 1998, Vol 32, Issue 1, p58ISSN1063-7826Publication typeArticleDOI10.1134/1.1187359