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- Title
Temperature-Dependent HfO<sub>2</sub>/Si Interface Structural Evolution and its Mechanism.
- Authors
Zhang, Xiao-Ying; Hsu, Chia-Hsun; Lien, Shui-Yang; Wu, Wan-Yu; Ou, Sin-Liang; Chen, Song-Yan; Huang, Wei; Zhu, Wen-Zhang; Xiong, Fei-Bing; Zhang, Sam
- Abstract
In this work, hafnium oxide (HfO2) thin films are deposited on p-type Si substrates by remote plasma atomic layer deposition on p-type Si at 250 °C, followed by a rapid thermal annealing in nitrogen. Effect of post-annealing temperature on the crystallization of HfO2 films and HfO2/Si interfaces is investigated. The crystallization of the HfO2 films and HfO2/Si interface is studied by field emission transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The experimental results show that during annealing, the oxygen diffuse from HfO2 to Si interface. For annealing temperature below 400 °C, the HfO2 film and interfacial layer are amorphous, and the latter consists of HfO2 and silicon dioxide (SiO2). At annealing temperature of 450-550 °C, the HfO2 film become multiphase polycrystalline, and a crystalline SiO2 is found at the interface. Finally, at annealing temperature beyond 550 °C, the HfO2 film is dominated by single-phase polycrystalline, and the interfacial layer is completely transformed to crystalline SiO2.
- Subjects
HAFNIUM oxide; EFFECT of temperature on metals; INTERFACES (Physical sciences); METALLIC thin films; ATOMIC layer deposition
- Publication
Nanoscale Research Letters, 2019, Vol 14, Issue 1, p1
- ISSN
1931-7573
- Publication type
Article
- DOI
10.1186/s11671-019-2915-0