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- Title
Cu-doping effects on nanostructural, electrical and optical properties of Cu<sub>x</sub>Pd<sub>1−x</sub>S/p-Si heterojunction.
- Authors
Ali, Syed Mansoor; AlGarawi, M. S.; Khan, M. A. Majeed; AlGamdi, S. S.; Ahmed, Jahangeer; Alam, Manawwer
- Abstract
The PdS/p-Si heterojunction was fabricated by preparation of PdS thin films on the p-type Si (10 0) substrates using versatile SILAR method. The alteration of nanostructural, morphological, optical and I–V characterization of CuxPd1−xS/p-Si (x = 0–0.1) heterojunction was examined at the different Cu-doping level to inspect the doping effects on the properties of heterojunction. The X-ray diffraction investigated that the crystallinity of prepared thin films enhanced as a function of Cu concentration. The morphological analysis presented that the PdS thin films was smooth, homogeneous and closed packed spherical grains. Electron dispersive X-ray (EDX) analysis confirmed the stoichiometric composition of PdS thin films. The diffuse reflectance spectroscopy in the prepared PbS/p-Si heterojunction was reduced and the band edge showed the blue shift in the visible range. Photoluminescence (PL) spectra revealed that the PbS/p-Si heterojunction recombination rate is decreased with Cu-doping. The effects of Cu-doping level on the electrical parameters of heterojunction such as ideality factor (n), saturation current (IS), barrier height (Φb) and series resistance (Rs) were computed by the execution of current–voltage (I–V) properties. Electrical properties indicated that behavior of the PdS/p-Si heterojunction were precisely controlled by doping level.
- Publication
Applied Physics A: Materials Science & Processing, 2021, Vol 127, Issue 1, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-020-04213-x