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- Title
Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure.
- Authors
Li, Tingting; Wang, Xiaolei; He, Xiaobin; Tang, Bo; Han, Kai; Qi, Zeming; Jiang, Haojie; Xiong, Wenjuan; Zhang, Peng; Li, Junfeng; Yan, Jiang; Xiang, Jinjuan; Lin, Fujiang
- Abstract
We experimentally investigate the effect of post-deposition annealing on the charge distribution of a metal-oxide-semiconductor capacitor with a TiN/HfO2/SiO2/Si gate structure. We decoupled interfacial charges at the SiO2/Si and HfO2/SiO2 interfaces; bulk charges in HfO2; and the dipole formation at the HfO2/SiO2 interface. The interfacial charges at the HfO2/SiO2 interface decreased and the dipole increased after H2 or N2 annealing. Oxygen dangling bonds are the physical origin of the charges at the HfO2/SiO2 interface. The interfacial charges at the SiO2/Si interface and the bulk charges in HfO2 are almost unchanged.
- Subjects
ANNEALING of metals; CAPACITORS; GATES; INDIUM gallium zinc oxide; OXYGEN
- Publication
Applied Physics A: Materials Science & Processing, 2020, Vol 126, Issue 5, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-020-03565-8