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Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system.
- Published in:
- NPJ Flexible Electronics, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41528-021-00132-w
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- Article
Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET.
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- Micromachines, 2019, v. 10, n. 11, p. 749, doi. 10.3390/mi10110749
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- Article
Solvent-Dependent Electrical Characteristics and Mechanical Stability of Flexible Organic Ferroelectric Field-Effect Transistors.
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- Micromachines, 2019, v. 10, n. 11, p. 727, doi. 10.3390/mi10110727
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- Article
3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influence.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-18682-y
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- Article
Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon.
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- Electronics (2079-9292), 2022, v. 11, n. 20, p. 3365, doi. 10.3390/electronics11203365
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- Article
Importance of Solvent Evaporation Temperature in Pre-Annealing Stage for Solution-Processed Zinc Tin Oxide Thin-Film Transistors.
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- Electronics (2079-9292), 2022, v. 11, n. 18, p. N.PAG, doi. 10.3390/electronics11182822
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- Article
Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO 2 Thin-Film Transistors.
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- Electronics (2079-9292), 2021, v. 10, n. 14, p. 1629, doi. 10.3390/electronics10141629
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- Article
Textile Triboelectric Nanogenerators with Diverse 3D-Spacer Fabrics for Improved Output Voltage.
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- Electronics (2079-9292), 2021, v. 10, n. 8, p. 937, doi. 10.3390/electronics10080937
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- Article
Influence of Active Channel Layer Thickness on SnO 2 Thin-Film Transistor Performance.
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- Electronics (2079-9292), 2021, v. 10, n. 2, p. 200, doi. 10.3390/electronics10020200
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- Article
Numerical Study of Sub-Gap Density of States Dependent Electrical Characteristics in Amorphous In-Ga-Zn-O Thin-Film Transistors.
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- Electronics (2079-9292), 2020, v. 9, n. 10, p. 1652, doi. 10.3390/electronics9101652
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- Article
Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor.
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- Electronics (2079-9292), 2020, v. 9, n. 3, p. 523, doi. 10.3390/electronics9030523
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- Article
Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors.
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- Electronics (2079-9292), 2020, v. 9, n. 2, p. 254, doi. 10.3390/electronics9020254
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- Article
Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors.
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- Electronics (2079-9292), 2020, v. 9, n. 1, p. 119, doi. 10.3390/electronics9010119
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- Article
Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route.
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- Electronics (2079-9292), 2019, v. 8, n. 9, p. 955, doi. 10.3390/electronics8090955
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- Article
Corrigendum: Functional solid additive modified PEDOT:PSS as an anode buffer layer for enhanced photovoltaic performance and stability in polymer solar cells.
- Published in:
- Scientific Reports, 2017, p. 46779, doi. 10.1038/srep46779
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- Article
Functional solid additive modified PEDOT:PSS as an anode buffer layer for enhanced photovoltaic performance and stability in polymer solar cells.
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- Scientific Reports, 2017, p. 45079, doi. 10.1038/srep45079
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- Article
Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices.
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- Scientific Reports, 2016, p. 34659, doi. 10.1038/srep34659
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- Publication type:
- Article
Fabrication of AlGaN/GaN MISHEMT with dual-metal gate electrode and its performances.
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- Applied Physics A: Materials Science & Processing, 2020, v. 126, n. 4, p. 1, doi. 10.1007/s00339-020-3453-4
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- Article
Engineered interface using a hydroxyl group-free polymeric buffer layer onto a TiO<sub>2</sub> nanocomposite film for improving the electrical properties in a low-voltage operated organic transistor.
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- Surface & Interface Analysis: SIA, 2012, v. 44, n. 4, p. 445, doi. 10.1002/sia.3824
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- Article
Hysteresis Reduction for Organic Thin Film Transistors with Multiple Stacked Functional Zirconia Polymeric Films.
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- Crystals (2073-4352), 2019, v. 9, n. 12, p. 634, doi. 10.3390/cryst9120634
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- Article
Importance of Blade-Coating Temperature for Diketopyrrolopyrrole-based Thin-Film Transistors.
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- Crystals (2073-4352), 2019, v. 9, n. 7, p. 346, doi. 10.3390/cryst9070346
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- Article
Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors.
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- Coatings (2079-6412), 2022, v. 12, n. 10, p. 1534, doi. 10.3390/coatings12101534
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- Article
Simulation of capacitorless dynamic random access memory based on junctionless FinFETs using grain boundary of polycrystalline silicon.
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- Applied Physics A: Materials Science & Processing, 2020, v. 126, n. 12, p. 1, doi. 10.1007/s00339-020-04125-w
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- Article
Application of Genetic Algorithm for More Efficient Multi-Layer Thickness Optimization in Solar Cells.
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- Energies (19961073), 2020, v. 13, n. 7, p. 1726, doi. 10.3390/en13071726
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- Article
The Crucial Role of Quaternary Mixtures of Active Layer in Organic Indoor Solar Cells.
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- Energies (19961073), 2019, v. 12, n. 10, p. 1838, doi. 10.3390/en12101838
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- Article
A Current Development of Energy Harvesting Systems for Energy‐Independent Bioimplantable Biosensors.
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- Small, 2024, v. 20, n. 43, p. 1, doi. 10.1002/smll.202403899
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- Article
Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency.
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- Advanced Intelligent Systems (2640-4567), 2022, v. 4, n. 9, p. 1, doi. 10.1002/aisy.202200110
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- Article
Organic tandem solar cells under indoor light illumination.
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- Progress in Photovoltaics, 2020, v. 28, n. 9, p. 946, doi. 10.1002/pip.3301
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- Article
In-Depth Analysis on the Fabry-Perot Effect of Cs<sub>2</sub>AgBiBr<sub>6</sub> Double Perovskite-Based Solar Cells via Optical Path Length Modulation.
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- International Journal of Energy Research, 2024, p. 1, doi. 10.1155/2024/9935893
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- Article
Formation of Cluster‐Structured Metallic Filaments in Organic Memristors for Wearable Neuromorphic Systems with Bio‐Mimetic Synaptic Weight Distributions.
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- Advanced Science, 2024, v. 11, n. 9, p. 1, doi. 10.1002/advs.202307494
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- Article
Organic Memristor‐Based Flexible Neural Networks with Bio‐Realistic Synaptic Plasticity for Complex Combinatorial Optimization.
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- Advanced Science, 2023, v. 10, n. 19, p. 1, doi. 10.1002/advs.202300659
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- Article
Effect of interface-dependent crystalline boundary on sub-threshold characteristics in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistor.
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- European Physical Journal - Applied Physics, 2014, v. 65, n. 3, p. 00, doi. 10.1051/epjap/2014130417
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- Article
High‐Detectivity Flexible Near‐Infrared Photodetector Based on Chalcogenide Ag<sub>2</sub>Se Nanoparticles.
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- Advanced Optical Materials, 2019, v. 7, n. 22, p. N.PAG, doi. 10.1002/adom.201900812
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- Article
Effect of Source–Drain Electric Field on Charge Transport Mechanism in Polymer‐Based Thin‐Film Transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 16, p. 1, doi. 10.1002/pssa.202000753
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- Article
Comparative Study of Triboelectric Nanogenerators with Differently Woven Cotton Textiles for Wearable Electronics.
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- Polymers (20734360), 2019, v. 11, n. 9, p. 1443, doi. 10.3390/polym11091443
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- Article
Urbach‐Energy‐Dictated Spatial Propagation of Electrons in Thermodynamically Tuned Amorphous Zirconia Thin Films.
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- Advanced Materials Interfaces, 2021, v. 8, n. 20, p. 1, doi. 10.1002/admi.202101104
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- Article
Improved Environment Stability of Y 2 O 3 RRAM Devices with Au Passivated Ag Top Electrodes.
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- Materials (1996-1944), 2022, v. 15, n. 19, p. 6859, doi. 10.3390/ma15196859
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- Article
Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance.
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- Materials (1996-1944), 2022, v. 15, n. 19, p. 6763, doi. 10.3390/ma15196763
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- Article
Atomic Structure Evaluation of Solution-Processed a -IZO Films and Electrical Behavior of a -IZO TFTs.
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- Materials (1996-1944), 2022, v. 15, n. 10, p. 3416, doi. 10.3390/ma15103416
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- Article
Enhanced Switching Reliability of Sol–Gel-Processed Y 2 O 3 RRAM Devices Based on Y 2 O 3 Surface Roughness-Induced Local Electric Field.
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- Materials (1996-1944), 2022, v. 15, n. 5, p. 1943, doi. 10.3390/ma15051943
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- Article
Flexible Sol-Gel—Processed Y 2 O 3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process.
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- Materials (1996-1944), 2022, v. 15, n. 5, p. 1899, doi. 10.3390/ma15051899
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- Article
Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO 2 /Si 3 N 4 Dual-Layer Insulator.
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- Materials (1996-1944), 2022, v. 15, n. 3, p. 819, doi. 10.3390/ma15030819
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- Article
Effects of Iodine Doping on Electrical Characteristics of Solution-Processed Copper Oxide Thin-Film Transistors.
- Published in:
- Materials (1996-1944), 2021, v. 14, n. 20, p. 6118, doi. 10.3390/ma14206118
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- Article
Improving of Sensitivity of PbS Quantum Dot Based SWIR Photodetector Using P3HT.
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- Materials (1996-1944), 2021, v. 14, n. 6, p. 1488, doi. 10.3390/ma14061488
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- Article
UV/Ozone-Treated and Sol–Gel-Processed Y 2 O 3 Insulators Prepared Using Gelation-Delaying Precursors.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 9, p. 791, doi. 10.3390/nano14090791
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- Article
Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y 2 O 3 Random-Access Memory.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 6, p. 532, doi. 10.3390/nano14060532
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- Article
Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 5, p. 466, doi. 10.3390/nano14050466
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- Article
Numerical Study on Overcoming the Light-Harvesting Limitation of Lead-Free Cs 2 AgBiBr 6 Double Perovskite Solar Cell Using Moth-Eye Broadband Antireflection Layer.
- Published in:
- Nanomaterials (2079-4991), 2023, v. 13, n. 23, p. 2991, doi. 10.3390/nano13232991
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- Article
Investigation of Donor-like State Distributions in Solution-Processed IZO Thin-Film Transistor through Photocurrent Analysis.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 23, p. 2986, doi. 10.3390/nano13232986
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- Article
Atomically Thin Amorphous Indium–Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 18, p. 2568, doi. 10.3390/nano13182568
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- Article