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- Title
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n<sup>+</sup>-n doping step.
- Authors
Sachenko, A. V.; Belyaev, A. E.; Boltovets, N. S.; Vinogradov, A. O.; Pilipenko, V. A.; Petlitskaya, T. V.; Anischik, V. M.; Konakova, R. V.; Korostinskaya, T. V.; Kostylyov, V. P.; Kudryk, Ya. Ya.; Lyapin, V. G.; Romanets, P. N.; Sheremet, V. N.
- Abstract
We present both theoretical and experimental temperature dependences of contact resistivity ρc(T) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation. The ρc(T) dependence was measured in the 125-375 K temperature range with the transmission line method, with allowance made for conduction in both the n+-layer and n+-n doping step.
- Subjects
SILICON; ELECTRICAL resistivity; TEMPERATURE effect; CONTACT resistance (Materials science); OHMIC contacts; DOPING agents (Chemistry)
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, Vol 17, Issue 1, p1
- ISSN
1560-8034
- Publication type
Article