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- Title
Improvement of the thermal stability and power consumption of SbSe through nitrogen doping.
- Authors
Wu, Weihua; Hu, Yifeng; Zhu, Xiaoqin; Sui, Yongxing; Xue, Jianzhong; Yuan, Li; Song, Sannian; Song, Zhitang
- Abstract
Nitrogen doping is applied to improve the thermal stability and power consumption of SbSe phase change thin film. Comparing to un-doped SbSe thin film, N-doped SbSe thin film has a higher crystallization temperature and better data retention. The measurement of atomic force microscopy indicated that the crystallization is inhibited and the surface of thin films becomes smoother after N doping. The analysis of X-ray diffraction proved that nitrogen doping can suppress the grain growth of the films and limit the grain size. The phase transition speed between the amorphous and crystalline state was investigated by the picosecond laser pulses. Phase change memory devices based on N-doped thin films were fabricated to test and evaluate the electrical properties. The results indicate that nitrogen-doped SbSe films have the potential in phase change memory application.
- Subjects
THIN films; THERMAL stability; ENERGY consumption; ANTIMONY compounds; PHASE change memory; ATOMIC force microscopy; CONDENSED matter physics
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 12, p9700
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-3637-4