We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Influence of sintering temperature on microwave dielectric properties, structure and lattice modes of Ba(ZnTa)O resonators.
- Authors
Sindam, Bashaiah; James Raju, K.
- Abstract
The phase pure Ba(ZnTa)O ceramic material was prepared using solid state reaction method. In order to achieve higher density (>97 %) and low dielectric loss at lower sintering temperature, the material was pre-ball milled, sieved and 1 wt% of PVA binder was added. The microwave dielectric properties, long range ordering of Zn/Ta sites were studied by varying the sintering temperature. The lattice distortion caused by slight diffusion of Ba ions into Zn sites is observed at higher sintering temperature due to ZnO loss. The stresses caused by lattice distortion associated with 1:1 and 1:2 ordering is discussed using Raman spectroscopy and correlated with dielectric loss tangent. The stabilized grain boundaries as well as 1:2 order structures are playing an important role in changes of dielectric loss tangent value. The best microwave dielectric properties of ε = 30 and Q × f = 119 THz and near zero temperature coefficient of resonance frequency at 8.51 GHz were obtained for the samples sintered at 1550 °C for 4 h.
- Subjects
TANTALUM compounds synthesis; BARIUM ions; DIELECTRIC resonators; ZINC compounds synthesis; DIELECTRIC loss; MICROWAVE chemistry; SINTERING; RAMAN spectroscopy
- Publication
Journal of Materials Science: Materials in Electronics, 2015, Vol 26, Issue 6, p3997
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-2936-0