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- Title
Deposition of luminescent a-SiN<sub> x </sub>:H Films with SiH<sub>4</sub>–N<sub>2</sub> gas mixture by VHF–PECVD using novel impedance matching method.
- Authors
Kobayashi, S.; Ohrui, N.; Chao, Y. C.; Aoki, T.; Kobayashi, H.; Asakawa, T.
- Abstract
Hydrogenated amorphous silicon nitride (a-SiN x :H) films are produced from a SiH4–N2 gas mixture by plasma enhanced chemical vapor deposition (PECVD) system with a newly developed impedance matching method at frequencies 13.6–150 MHz. An increase in the rf power from 35 to 350 mW/cm2 at the highest frequency of 150 MHz increases the optical bandgap ( E opt) from 2.0 to 4.5 eV. Optical emission spectroscopy (OES) of the SiH4–N2 plasma shows that the emission intensity of SiH* (414 nm) is almost proportional to deposition rate. Films of a-SiN x :H deposited at 150 MHz and 210 mW/cm2 has an optical bandgap of E opt ≈ 4.1 eV and emits visible photoluminescence (PL) at room temperature (RT).
- Subjects
MOLECULAR spectroscopy; SILICON nitride; AMORPHOUS substances; EMISSION spectroscopy; SPECTRUM analysis
- Publication
Journal of Materials Science: Materials in Electronics, 2007, Vol 18, p29
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9181-0