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- Title
A scalable advanced RF IC design-oriented MOSFET model.
- Authors
Bucher, Matthias; Bazigos, Antonios; Yoshitomi, Sadayuki; Itoh, Nobuyuki
- Abstract
This article presents a validation of the EKV3 MOSFET compact model dedicated to the design of analogue/RF ICs using advanced CMOS technology. The EKV3 model is compared with DC, CV and RF measurements up to 20 GHz of a 110 nm CMOS technology. The scaling behaviour over a large range of channel lengths and bias conditions is presented. Long-channel devices show significant non-quasi static effects while in short-channel devices the parasitics modelling is critical. This is illustrated with Y-parameters and ft vs. ID in NMOS and PMOS devices, showing good overall RF modelling abilities of the EKV3 MOSFET model. © 2008 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2008.
- Subjects
METAL oxide semiconductor field-effect transistors; COMPLEMENTARY metal oxide semiconductors; ANALOG electronic systems; MATHEMATICAL models; INTEGRATED circuits
- Publication
International Journal of RF & Microwave Computer-Aided Engineering, 2008, Vol 18, Issue 4, p314
- ISSN
1096-4290
- Publication type
Article
- DOI
10.1002/mmce.20288