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- Title
Electric Instability in n-CdTe:In Layers with S-Shaped Voltage-Current Characteristics.
- Authors
Senokosov, E.; Makarevich, A.; Sorochan, V.
- Abstract
A switching of the S-type in the 20–200 µm thick polycrystalline n- CdTe:In layers with resistance of 103–106 Ω·cm is studied. The electric instability in the layers is found to be due to the electron-thermal breakdown mechanism. The dependence of the switching threshold parameters on the intensity of exposure can be used for fabrication of infrared-radiation controlled electric switches on the basis of n- CdTe:In layers.
- Subjects
POLYCRYSTALLINE semiconductors; TELLURIDES; CADMIUM compounds; INDIUM; ELECTRONS; ELECTRIC breakdown; INFRARED radiation
- Publication
Russian Physics Journal, 2005, Vol 48, Issue 6, p581
- ISSN
1064-8887
- Publication type
Article
- DOI
10.1007/s11182-005-0173-3