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- Title
Possible strain induced Mott gap collapse in 1T-TaS<sub>2</sub>.
- Authors
Bu, Kunliang; Zhang, Wenhao; Fei, Ying; Wu, Zongxiu; Zheng, Yuan; Gao, Jingjing; Luo, Xuan; Sun, Yu-Ping; Yin, Yi
- Abstract
Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal dichalcogenide 1T-TaS 2 , with the transition triggered by an optical excitation, a gate controlled intercalation, or a voltage pulse. However, the sudden insulator-metal transition hinders an exploration of how the transition evolves. Here, we report the strain as a possible new tuning parameter to induce Mott gap collapse in 1T-TaS 2 . In a strain-rich area, we find a mosaic state with distinct electronic density of states within different domains. In a corrugated surface, we further observe and analyze a smooth evolution from a Mott gap state to a metallic state. Our results shed new lights on the understanding of the insulator-metal transition and promote a controllable strain engineering on the design of switching devices in the future. Mott insulation and charge density waves are fascinating phenomena which alter the electronic structure of a system and occur via the complex interplay of a number of different parameters. Here, the authors use scanning tunnelling microscopy to investigate the localised changes in the electronic state near the insulator-metal transition of 1T-TaS2 and find that strain may play a role.
- Subjects
TRANSITION metals; ELECTRIC insulators &; insulation; DENSITY wave theory; ELECTRIC potential; CHARGE density waves
- Publication
Communications Physics, 2019, Vol 2, Issue 1, pN.PAG
- ISSN
2399-3650
- Publication type
Article
- DOI
10.1038/s42005-019-0247-0