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- Title
Magnetocoupling and domain structure of BiFeO/ LaFeO heterostructures deposited on LaSrCoO/Pt/TiO/SiO/Si (100) substrates by the soft chemical method.
- Authors
Deus, R.; Gonçalves, L.; Cavalcanti, C.; Rocha, L.; Longo, E.; Simões, A.
- Abstract
BiFeO (BFO) and LaFeO (LFO) heterostructures were obtained at room temperature on Pt/TiO/SiO/Si (100) substrates by chemical solution deposition at a temperature of 500 °C for 2 h. For comparison, the films were also deposited on LaSrCoO coated Pt/TiO/SiO/Si (100) substrates. The magnetoelectric coefficient measurement was performed to show magnetoelectric coupling behavior of such heterostructures. LaSrCoO (LSCO) bottom electrode strongly promotes the formation of high intensity (104) texture of BFO-LFO heterostructures resulting in huge crystal size. The dielectric constants of the films increased from 307 to 400 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10 to 10-10 A/cm at a voltage of 5 V. Improvement of the P- E hysteresis loop was observed for the heterostructure due the decrease of leakage current caused by the LFO sublayer. Room temperature magnetic coercive field measurements indicate that the magnetic behavior is influenced by the nature of bottom electrode.
- Subjects
HETEROSTRUCTURES; BISMUTH iron oxide; LANTHANUM; IRON oxides; THIN films
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 12, p8630
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-017-6587-1