We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Splitting of transverse optical phonon modes localized in GaAs quantum wires on a faceted (311)A surface.
- Authors
Volodin, V. A.; Efremov, M. D.; Prints, V. Ya.; Preobrazhenskiı, V. V.; Semyagin, B. R.; Govorov, A. O.
- Abstract
The energy splitting of fundamental localized transverse optical (TO1) phonon modes in GaAs/AlAs superlattices and quantum wires grown by molecular-beam epitaxy on a faceted (311)A GaAs surface is observed by Raman spectroscopy. The form of the Raman scattering tensor makes it possible to observe the TO[sub x] and TO[sub y] modes separately, using different scattering geometries (the y and x axes are the directions of displacement of the atoms and are directed parallel and transverse to the facets on the (311)A surface). Enhancement of the splitting of the TO1[sub x] and TO1[sub y] modes is observed as the average thickness of the GaAs layers is decreased from 21 to 8.5 Å. The splitting is probably due to the effect of the corrugation of the GaAs/AlAs (311)A heterointerface on the properties of localized phonon modes.
- Subjects
PHONONS; SHEAR waves; MOLECULAR beam epitaxy
- Publication
JETP Letters, 1997, Vol 66, Issue 1, p47
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.567481