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- Title
Structural and Optical Properties of GaSe/GaAs(001) Layers Grown by Molecular Beam Epitaxy.
- Authors
AVDIENKO, P. S.; SOROKIN, S. V.; SEDOVA, I. V.; KIRILENKO, D. A.; SMIRNOV, A. N.; ELISEEV, I. A.; DAVYDOV, V. YU.; IVANOV, S. V.
- Abstract
This paper reports on molecular beam epitaxy of GaSe 2D-layers on GaAs(001) substrates at growth temperatures of TS ≈ 400-540 °C as well as studies of their structural and optical properties. Transmission electron microscopy and the Raman spectroscopy techniques have established a correlation between the molecular beam epitaxy growth conditions and the GaSe polytypes being formed. It has been shown that GaSe layers grown at TS ≈ 400 °C can be characterized as γ-GaSe polytype with a rhombohedral crystal lattice structure, whereas the layers grown at TS ≈ 500 °C have a hexagonal structure and possess a ε-GaSe polytype. The latter also exhibit strong near band-edge photoluminescence at T = 300 K. The strong anisotropy of the photoluminescence intensity in an array of GaSe nanoplatelets has been revealed.
- Subjects
MOLECULAR beam epitaxy; OPTICAL properties; RAMAN spectroscopy technique; AUDITING standards; RAMAN microscopy; TRANSMISSION electron microscopy
- Publication
Acta Physica Polonica: A, 2019, Vol 136, Issue 4, p608
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.136.608