We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
DOPING DEPENDENCE OF SUPERCONDUCTING GAP IN Bi<sub>2</sub>Sr<sub>2-x</sub>La<sub>x</sub>CuO<sub>6+δ</sub> (x = 0.2, 0.4, 0.6).
- Authors
MACHIDA, T.; KAMIJO, Y.; KATO, T.; HARADA, K.; SAITO, R.; NOGUCHI, T.; SAKATA, H.
- Abstract
We observed the distribution of the superconducting gap in Bi2Sr2-xLaxCuO6+δ (Bi2201-La) by scanning tunneling spectroscopy at x = 0.2 (over doped), 0.4 (optimally doped) and 0.6 (under doped). The superconducting gap was spatially distributed in all samples. As the carrier concentration is reduced, the distribution became much broader and the mean value of superconducting gap, Δmean increased. We found that the distribution and Δmean in Bi2201-La grew more rapidly than in Bi2Sr2CaCu2O8+δ with decreasing the carrier concentration.
- Subjects
SEMICONDUCTOR doping; SEMICONDUCTOR defects; SCANNING tunneling microscopy; QUANTUM tunneling; SUPERCONDUCTORS; PHYSICS
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2007, Vol 21, Issue 18/19, p3227
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979207044251