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- Title
Nickel Silicidation on Polycrystalline Silicon Germanium Films.
- Authors
Choi, W. K.; Pey, K. L.; Zhao, H. B.; Osipowicz, T.; Shen, Z. X.
- Abstract
The interfacial reactions of Ni with polycrystalline Si[sub 0.8]Ge[sub 0.2] films at a temperature range of 300900°C by rapid thermal annealing for 60s are studied. The sheet resistances of the silicide films were relatively low at ∼10 ohm/sq for samples annealed below 600°C. X-Ray diffraction results suggested the existence of low resistivity phase Ni(Si[sub 1-x]Ge[sub x]) in the film. The significant increase in sheet resistance for films annealed at 700-900°C is probably due to the reduction in the density of Ni(Si[sub 1-x]Ge[sub x]) as a result of fast Ni diffusion at high annealing temperatures. Fast grain boundary diffusion of Ni was suggested to cause the lowering of formation temperature of Ni(Si[sub 1-x]Ge[sub x]) on polycrystalline Si[sub 1-x]Ge[sub x] films. Rutherford backscattering results showed that for films annealed at a temperature range of 300-600°C, Ni has reacted with the polycrystalline films. However, at an annealing temperature higher than 700°C, Ni diffused through the whole film.
- Subjects
THIN films; SILICIDES; POLYCRYSTALLINE semiconductors
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, Vol 16, Issue 28/29, p4323
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979202015352