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- Title
GaAs p- i- n structures for X-ray detectors grown on Ge and GaAs substrates.
- Authors
Zhilyaev, Yu.; Mikulik, D.; Nasonov, A.; Orlova, T.; Panteleev, V.; Poletaev, N.; Fedorov, L.; Shcheglov, M.
- Abstract
Features of the creation of gallium arsenide (GaAs) p- i- n structures on germanium substrates are considered. Optimum regimes for growth of thick GaAs layers by hydride-chloride vapor phase epitaxy (HVPE) on Ge substrates are established, which allow high-quality p- i- n structures with characteristics close to those reached by homoepitaxy to be obtained. The spectra of exciton photoluminescence have been measured for ultrahigh-purity GaAs layers of various thicknesses grown under differing HVPE conditions.
- Subjects
GALLIUM arsenide; X-rays; DETECTORS; GERMANIUM; SUBSTRATES (Materials science); HOMOEPITAXY; PHOTOLUMINESCENCE; EXCITON theory
- Publication
Technical Physics Letters, 2012, Vol 38, Issue 5, p399
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785012050161