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- Title
Experimental Performance Analysis of Fabricated Si/Ge Thin Film Structure.
- Authors
Eladl, Sh. M.; Sharshar, K. A.
- Abstract
This paper is devoted to the evaluation of a Silicon/Germanium (Si/Ge) thin film structure based on experimental measurements. An electron beam evaporator was used to fabricate this structure. The sample was prepared under high vacuum conditions (pressure of 10-5 Torr, power of 6 kV and current of 200 mA). At these conditions, it was possible to get films with thickness of approximately 300 Å. The capacitance-voltage (C-V) and current-voltage (I-V) measurements of the sample were performed by a staircase sweep of voltages from 0 to 5 V and back from 5 to 0 V at room temperature. The sample exhibits a low hysteresis in measurements; this hysteresis is gradually removed when the sample is exposed to temperatures until 80 °C using a Carbolite Oven. It is also observed that both C-V and I-V characteristic curves of the sample has been smoothened. This sample exhibits an electroforming behavior as a metal-oxide-semiconductor (MOS) device over a short time duration of the selected staircase double sweep, hence it can be exploited as a fast switching element in digital microelectronic circuits. In addition, the hysteresis changes over the range from room temperature until 80 °C have opened the door to the possibility of exploiting this sample as a proximity temperature sensor within that range of temperature.
- Subjects
THIN films; SILICON alloys; PROXIMITY detectors; DIGITAL electronics; TEMPERATURE sensors; HYSTERESIS
- Publication
International Journal of Nanoelectronics & Materials, 2023, Vol 16, Issue 1, p53
- ISSN
1985-5761
- Publication type
Article