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- Title
Copper-Doped Chromium Oxide Hole-Transporting Layer for Perovskite Solar Cells: Interface Engineering and Performance Improvement.
- Authors
Qin, Ping-Li; Lei, Hong-Wei; Zheng, Xiao-Lu; Liu, Qin; Tao, Hong; Yang, Guang; Ke, Wei-Jun; Xiong, Liang-Bin; Qin, Ming-Chao; Zhao, Xing-Zhong; Fang, Guo-Jia
- Abstract
To achieve high performance for inverted structure perovskite solar cells, the design of hole-transporting layer (HTL) and related interfacial engineering are very important tasks. To avoid the hygroscopic characteristics of poly (3, 4-ethylenedioxythiophene):poly (styrenesulfonate) that may degrade the adjacent moisture-sensitive perovskite layer, here, a new CrO x-based hole-transport material has been introduced. The feasibility of fabrication efficient perovskite solar cells with CrO x and Cu-CrO x as HTLs is confirmed for the first time. Cu doping can modify the chromium ion contents and suppress the formation of surface hydroxylation and CrO3 in the CrO x film, which can increase work function, electrical conductivity, and carrier mobility of the CrO x films. Consequently, the power conversion efficiency of the corresponding device increases to 10.99% from its original value of 9.27%. This study not only provides a novel HTL system for high performance and decently stable optoelectronic devices but also reveals the importance of HTL doping for interface engineering.
- Subjects
PEROVSKITE; SOLAR cells; CHROMIUM oxide; HYDROXYLATION; ELECTRIC conductivity; SOLAR energy conversion
- Publication
Advanced Materials Interfaces, 2016, Vol 3, Issue 14, pn/a
- ISSN
2196-7350
- Publication type
Article
- DOI
10.1002/admi.201500799