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- Title
Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy.
- Authors
Posri, Supeeranat; Thainoi, Supachok; Kiravittaya, Suwit; Tandaechanurat, Aniwat; Nuntawong, Noppadon; Sopitpan, Suwat; Yordsri, Visittapong; Thanachayanont, Chanchana; Kanjanachuchai, Songphol; Ratanathammaphan, Somchai; Panyakeow, Somsak
- Abstract
In this study, the growth and photoluminescence (PL) properties of InSb/GaSb nano‐stripes grown by molecular beam epitaxy on (001) GaSb substrate are reported. In situ reflection high‐energy electron diffraction observation during InSb growth shows that the growth of InSb on GaSb surface is in Stranski–Krastanov mode and results in nano‐stripe formation. The obtained nano‐stripes have rectangular‐based structure with the height of 25.2 ± 4.0 nm and they are elongated along [110] direction. PL emission from buried InSb/GaSb nano‐stripes shows the emission peak at ≈1850 nm (0.67 eV). According to the emission energy and the structural information, low In content of ≈0.24 in nominally grown InSb/GaSb nano‐stripe is estimated. Power‐dependent PL spectroscopy shows a linear relation between integrated PL intensity and the excitation power. Thermal activation energy of ≈20 meV from InSb nano‐stripe emission is extracted from the temperature‐dependent PL spectroscopy. The authors report the growth and photoluminescence properties of InSb/GaSb nano‐stripes grown by molecular beam epitaxy on (001) GaSb substrate. In situ reflection high‐energy electron diffraction observation shows that the growth is in Stranski–Krastanov mode. The obtained nano‐stripes have rectangular‐based structure. Power‐ and temperature‐dependent photoluminescence spectroscopies are performed.
- Subjects
PHOTOLUMINESCENCE; MOLECULAR beam epitaxy; ELECTRON diffraction; ACTIVATION energy; ELECTRONIC excitation
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2019, Vol 216, Issue 1, pN.PAG
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201800498