We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Role of a-Si:H in lateral growth of crystalline silicon nanowires using Pb and In catalysts.
- Authors
Kočka, Jan; Müller, Martin; Stuchlík, Jiří; Stuchlíková, Ha; Červenka, Jiří; Fejfar, Antonín
- Abstract
Growth of crystalline silicon nanowires at low temperatures by chemical vapour deposition is an important technological challenge for electronic and sensor nanodevices. Here we present a comparative study of crystalline silicon nanowire growth by plasma-enhanced chemical vapour deposition (PECVD) using lead and indium. We compare two different growth methods that produce either in-plane or out-of-plane crystalline Si nanowires (SiNWs) at temperatures below 400 °C depending on the growth conditions and the catalyst used. The first growth method is based on the deposition of a thin film of amorphous silicon on a substrate at 150 °C and subsequent thermal annealing at 400 °C. The second method uses direct SiNWs growth at 400 °C in PECVD. While the first method produces in-plane Si nanowires with In and no nanowire growth for Pb, the second method gives rise to out-of-plane Si nanowires for In and in-plane nanowires for Pb. We show that one of the reasons for the difference between these two methods is the properties of amorphous hydrogenated silicon (a-Si:H), which acts as the source material for in-plane growth of Si nanowires.
- Subjects
INDIUM; LEAD; NANOWIRES; PLASMA-enhanced chemical vapor deposition; SILICON
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2016, Vol 213, Issue 7, p1821
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201532923