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- Title
Thermoelectric properties of S-doped Cu2Se materials synthesized by high-pressure and high-temperature method.
- Authors
Xue, Lisha; Fang, Chao; Shen, Weixia; Shen, Manjie; Ji, Wenting; Zhang, Yuewen; Zhang, Zhuangfei; Jia, Xiaopeng
- Abstract
High-pressure technique is an effective route to synthesize thermoelectric materials and tune transport properties simultaneously. In this work, S-doped copper–selenium compounds ( Cu 2 Se 1 − x S x , 0 ≤ x ≤ 0. 0 5) were successfully synthesized by high-pressure and high-temperature (HPHT) technology in just 30 min. Cu 2 Se 1 − x S x samples show layered morphology composed of abundant pores and lattice defects. The appropriate S introduction (x = 0. 0 1 and 0.03) can effectively enhance Seebeck coefficient and reduce the thermal conductivity of Cu 2 Se. Compared with the pure Cu 2 Se sample, Cu 2 Se 0. 9 7 S 0. 0 3 exhibits a 30% lower thermal conductivity, but the decline of power factor by the distinctly increased electrical resistivity at high temperature results in a smaller zT at temperature > 6 5 0 K. The variations of thermoelectric properties are resulted from the competitive effects between S-doping and actual composition change (Cu:S). It indicates that S-doping is not so effective in improving the zT value of Cu 2 Se materials by high-pressure synthesis.
- Subjects
SEEBECK coefficient; CRYSTAL defects; THERMAL conductivity; HIGH temperature metallurgy; ELECTRICAL resistivity; HIGH temperatures; THERMOELECTRIC materials
- Publication
Modern Physics Letters B, 2020, Vol 34, Issue 1, pN.PAG
- ISSN
0217-9849
- Publication type
Article
- DOI
10.1142/S0217984920500062