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Effects of Cooling Process on GaN Crystal Growth by Na Flux Method.
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- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5260, doi. 10.1007/s11664-020-08230-7
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- Article
Effects of Growth Temperature on Morphology of GaN Crystals by Na Flux Liquid Phase Epitaxial Method.
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- Journal of Electronic Materials, 2019, v. 48, n. 6, p. 3570, doi. 10.1007/s11664-019-07111-y
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- Article
Temperature and DC Bias Dependences of Dielectric Behavior of Different Oriented 0.23PIN-0.52PMN-0.25PT Single Crystals.
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- Journal of Electronic Materials, 2018, v. 47, n. 10, p. 6282, doi. 10.1007/s11664-018-6401-8
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- Article
Growth Temperature Dependence of Morphology of GaN Single Crystals in the Na-Li-Ca Flux Method.
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- Journal of Electronic Materials, 2018, v. 47, n. 2, p. 1569, doi. 10.1007/s11664-017-5970-2
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- Article
Growth of GaN Crystals by the Na Flux Method Under a Temperature Gradient.
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- Journal of Electronic Materials, 2014, v. 43, n. 4, p. 1219, doi. 10.1007/s11664-014-2996-6
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- Article
Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method.
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- Journal of Materials Science, 2024, v. 59, n. 17, p. 7318, doi. 10.1007/s10853-024-09613-5
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- Article
Industrial growth and characterization of Si-doped GaAs crystal by a novel multi-crucible Bridgman method.
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- Crystal Research & Technology, 2017, v. 52, n. 6, p. n/a, doi. 10.1002/crat.201700052
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- Article
Investigation on growth defects in Pb(Zn.
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- Crystal Research & Technology, 2006, v. 41, n. 11, p. 1067, doi. 10.1002/crat.200610723
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- Article
5<sup>″</sup> diameter PIN-PMN-PT crystal growth by the Bridgman method.
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- Journal of Advanced Dielectrics, 2020, v. 10, n. 3, p. N.PAG, doi. 10.1142/S2010135X20500010
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- Article
Dielectric behavior and phase transition in [111]-oriented PIN-PMN-PT single crystals under dc bias.
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- Journal of Advanced Dielectrics, 2014, v. 4, n. 1, p. -1, doi. 10.1142/S2010135X14500040
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- Article