Found: 25
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Fermi Level Control of Point Defects During Growth of Mg-Doped GaN.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 815, doi. 10.1007/s11664-012-2342-9
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A Comparison of ZnO Nanowires and Nanorods Grown Using MOCVD and Hydrothermal Processes.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 894, doi. 10.1007/s11664-012-2444-4
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Nanoplasmonic Enhanced ZnO/Si Heterojunction Metal-Semiconductor-Metal Photodetectors.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 889, doi. 10.1007/s11664-013-2526-y
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Conduction- and Valence-Band Energies in Bulk InAsSb and Type II InAsSb/InAs Strained-Layer Superlattices.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 918, doi. 10.1007/s11664-013-2528-9
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Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 794, doi. 10.1007/s11664-013-2527-x
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Molecular Beam Epitaxy of Graded-Composition InGaN Nanowires.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 863, doi. 10.1007/s11664-013-2544-9
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Synthesis and Characterization of Luminescent Eu(TTA)phen in a Poly(ethylene oxide) Matrix for Detecting Traces of Water.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 927, doi. 10.1007/s11664-013-2559-2
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Synthesis, Structures, and Multiferroic Properties of Strontium Hexaferrite Ceramics.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 906, doi. 10.1007/s11664-012-2426-6
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Characterization of Colloidal Quantum Dot Ligand Exchange by X-ray Photoelectron Spectroscopy.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 809, doi. 10.1007/s11664-012-2371-4
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Si Doping of GaN in Hydride Vapor-Phase Epitaxy.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 820, doi. 10.1007/s11664-012-2373-2
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Growth of AgGaTe Layers by a Closed-Space Sublimation Method.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 859, doi. 10.1007/s11664-012-2461-3
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- Article
Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 875, doi. 10.1007/s11664-013-2550-y
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- Article
Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 833, doi. 10.1007/s11664-013-2491-5
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Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 854, doi. 10.1007/s11664-013-2537-8
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Double-Pulsed Growth of InN by RF-MBE.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 849, doi. 10.1007/s11664-013-2499-x
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- Article
Toward Discrete Axial p- n Junction Nanowire Light-Emitting Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 868, doi. 10.1007/s11664-013-2498-y
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- Article
Formation of Nanodimensional 3C-SiC Structures from Rice Husks.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 799, doi. 10.1007/s11664-012-2421-y
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- Article
Nonradiative Energy Transfer Between Colloidal Quantum-Dot Phosphors and Silicon Carbide Diodes.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 805, doi. 10.1007/s11664-013-2547-6
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- Article
Cluster and Thickness Dependence of Ferromagnetism in Nickel In Situ-Doped Amorphous AlN Thin Films.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 844, doi. 10.1007/s11664-013-2493-3
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Polarization-Engineered Enhancement-Mode High-Electron-Mobility Transistors Using Quaternary AlInGaN Barrier Layers.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 826, doi. 10.1007/s11664-013-2473-7
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Growth and Characterization of InGaN Multiple Quantum Wells Without Phase Separation.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 838, doi. 10.1007/s11664-013-2558-3
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Growth and Characterization of InGaAs/GaAsP Strained-Layer Superlattices with High Values of y (~80%).
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 912, doi. 10.1007/s11664-012-2375-0
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Characterization and Formation Mechanism of Six Pointed Star-Type Stacking Faults in 4H-SiC.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 787, doi. 10.1007/s11664-012-2379-9
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Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 901, doi. 10.1007/s11664-012-2326-9
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Room-Temperature Quantum Cascade Laser: ZnO/ZnMgO Versus GaN/AlGaN.
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- Journal of Electronic Materials, 2013, v. 42, n. 5, p. 882, doi. 10.1007/s11664-013-2548-5
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