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- Title
Doped tellurite glasses: Extending near-infrared emission for near-2.0-μm amplifiers.
- Authors
Seshadri, M.; Anjos, V.; Bell, M. J. V.; Barbosa, Luiz C.; Bosco, Giácomo B. F.; Tessler, Leandro R.; Suresh Kumar, J.; Graça, Manuel P. F.; Soares, Manuel. J.; Radha, M.; Ratnakaram, Y. C.
- Abstract
Tm3+-singly-doped and Tm3+-/Ho3+-codoped TeO2-Bi2O3-ZnO-Li2O-Nb2O5 ( TBZLN) tellurite glasses were successfully prepared by the melt-quenching technique. Emission characteristics and energy transfer mechanisms were studied upon 785-nm laser diode excitation. A significant enhancement of emission intensity at 1.81 μm with increasing concentration of Tm3+ ions has been observed while increase in the emission intensity at 2.0 μm with increasing concentration of Ho3+ has been observed up to the equal concentration of Tm3+ (0.5 mol%) in TBZLN glasses. The stimulated emission cross section of Tm3+: 3F4→3H6 (5.20×10−21 cm2) and Ho3+: 5I7→5I8 (4.00×10−21 cm2) in 1.0 mol% Tm3+-doped and 0.5 mol% Tm3+/1.0 mol% Ho3+-codoped TBZLN glasses are higher compared with the reported and are found to be excellent candidates for solid-state lasers operating at ~1.8 and 2.0 μm, respectively. The extension of near-infrared ( NIR) emission of Tm3+ with Ho3+ ions provides the possibility of using these materials for broadband NIR amplifiers.
- Subjects
TELLURITES; METALLIC glasses; QUENCHING (Chemistry); ENERGY transfer; SEMICONDUCTOR lasers
- Publication
International Journal of Applied Glass Science, 2017, Vol 8, Issue 2, p216
- ISSN
2041-1286
- Publication type
Article
- DOI
10.1111/ijag.12213